研究目的
Investigating the challenges and solutions for implementing plasma texturing of silicon wafers and finished solar cells into mass production, focusing on overcoming surface contamination, ion bombardment damage, and surface passivation issues.
研究成果
The ICP plasma textured samples demonstrate sufficient electrical and optical properties for solar cell production, with a new approach for texturing the SiN layer of finished solar cells introduced to mitigate previous challenges.
研究不足
The study acknowledges potential plasma-induced impurities and the challenge of detecting F within the SiOxFy layer due to desorption upon exposure to air.
1：Experimental Design and Method Selection
The study compares ICP plasma texturing with standard wet chemical processes for silicon wafers, focusing on optical and electrical properties post-texturing.
2：Sample Selection and Data Sources
CZ wafers (<100> orientated, 180 μm thick, 12 Ω?cm boron doped) were split into two batches for ICP plasma texturing and wet chemical processing.
3：List of Experimental Equipment and Materials
Includes ICP plasma texturing setup, wet chemical processing equipment, integrating sphere from Perkin Elmer (Lambda 1050 UV/VIS/NIR Spectrometer), QSSPC system BT-120, FEI TEM/STEM Tecnai G2 F20 tool, and Kratos Axis Ultra DLD instrument.
4：Experimental Procedures and Operational Workflow
Detailed steps include plasma saw damage removal, texturing, passivation with SiN layer, and measurement of hemispherical reflection and effective charge carrier lifetimes.
5：Data Analysis Methods
Analysis of optical properties via hemispherical reflection measurements and electrical properties through effective charge carrier lifetime measurements.
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