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Millimeter-Scale Growth of Single-Oriented Graphene on a Palladium Silicide Amorphous Film
摘要： It is widely accepted in condensed matter physics and material science communities that a single-oriented overlayer cannot be grown on an amorphous substrate because the disordered substrate randomizes the orientation of the seeds, leading to polycrystalline grains. In the case of two-dimensional materials such as graphene, the large-scale growth of single-oriented materials on an amorphous substrate has remained unsolved. Here, we demonstrate experimentally that the presence of uniformly oriented graphene seeds facilitates the growth of millimeter-scale single-oriented graphene with 3×4 mm2 on palladium silicide, which is an amorphous thin film, where the uniformly oriented graphene seeds were epitaxially grown. The amorphous palladium silicide film promotes the growth of the single-oriented growth of graphene by causing carbon atoms to be diffusive and mobile within and on the substrate. In contrast to these results, without the uniformly oriented seeds, the amorphous substrate leads to the growth of polycrystalline graphene grains. This millimeter-scale single-oriented growth from uniformly oriented seeds can be applied to other amorphous substrates.
关键词： silicon carbide,amorphous substrate,single orientation,graphene,palladium silicide
更新于2025-09-23 15:23:52
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Sub-micron features from polymer-derived SiOC via imprint lithography
摘要： Silicon oxycarbide (SiOC) is a unique class of materials with great potential for facile manufacturing of complex shaped high temperature parts and devices. In this study, we examine the characteristics of micron-sized ridge and rod patterns of SiOC created by imprint lithography. Feature fidelity, shape change, and shrinkage are studied as a function of pyrolysis condition and feature size. All the features have acceptable surface fidelity under the pyrolysis conditions studied. However, pronounced rounding and flattening of patterned features are observed as the pyrolysis temperature increases or the feature size decreases. Based on the Kelvin and Gibbs-Thomson equations, we can predict the feature evolution and show that the feature rounding and flattening are due to surface diffusion and evaporation-condensation. As a result, the features also have more linear shrinkage than the bulk.
关键词： Shrinkage,Feature fidelity,Silicon oxycarbide,Rounding,Pyrolysis
更新于2025-09-23 15:23:52
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Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method
摘要： In this work, the pure InGaN thin films were grown using n-type and p-type silicon substrates at varying substrate temperatures using the sputtering method. The effects of substrate and substrate temperature on the structural, morphological and optical properties of the thin films grown were investigated. X-ray diffraction (XRD) analyzes of the obtained films illustrates crystal structures at C substrate temperature, the films were found to be hexagonal. Scanning electron microscopy (SEM) was used to investigate the shape, size and surface distribution of the particles formed on film surfaces. The reflection and optical band gap (Eg) of the films were investigated from the optical analyzes taken with the UV-VIS spectrophotometer. As a result of these analyzes, it has been reached that the substrate and substrate temperature have a great influence on the structural, morphological and optical properties of the films. The experimental findings obtained in the study are compared with the studies given in the literature and the similarities and differences are discussed.
关键词： InGaN growth,silicon substrate,thin films,sputtering technique,substrate temperature
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - 40Gb/s Carrier Depletion-Based Silicon Micro-Ring Modulators
摘要： A high-speed silicon microring modulator based on a titanium-doped silicon rib waveguide has been demonstrated. Small footprint of 26.5 μm × 26.5 μm with low driving voltage of 1.5 V and 22 dB extinction ratio at 20 Gb/s modulation has been achieved. The high-speed performance is attributed to the low capacitance of the device and the efficient plasma dispersion effect in silicon. Moreover, the modulator exhibits a low propagation loss of 2.5 dB/cm and a high modulation efficiency of 1.5 V·cm. The device is fabricated on a silicon-on-insulator (SOI) wafer with a 220 nm top silicon layer and a 2 μm buried oxide layer. The rib waveguide has a width of 500 nm and a height of 220 nm with a slab height of 150 nm. The titanium doping concentration is 1×10^20 cm^{-3}. The modulator is characterized using a lightwave component analyzer and a high-speed photodetector. The 3-dB bandwidth is measured to be 20 GHz. The eye diagrams at 20 Gb/s show clear eye opening with low jitter. The results indicate that the titanium-doped silicon microring modulator is promising for high-speed optical interconnects.
关键词： high-speed modulation,titanium doping,optical interconnects,silicon photonics,microring modulator
更新于2025-09-23 15:23:52
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Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities
摘要： We model optical parametric oscillation in ring cavities with two-photon absorption, focusing on silicon at 1.55 μm. Oscillation is possible if free-carrier absorption can be mitigated; this can be achieved using carrier sweep-out in a reverse-biased p-i-n junction to reduce the carrier lifetime. By varying the pump power, detuning, and reverse-bias voltage, it is possible to generate frequency combs in cavities with both normal and anomalous dispersion at a wide range of wavelengths including 1.55 μm. Furthermore, a free-carrier self-pulsing instability leads to rich dynamics when the carrier lifetime is sufficiently long.
关键词： nonlinear optics,Frequency comb,silicon photonics
更新于2025-09-23 15:23:52
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The effect of cut depth and distribution for abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon
摘要： Due to the existence of an acid etch resistant thin amorphous silicon layer over the smooth grooves of the diamond wire sawing polycrystalline silicon wafer surface, the anti-re?ection e?ect is usually not ideal using the mature acidic texturization. The amorphous silicon layer will be produced on the machined surface by material ductile removal. Therefore, during the process of cutting photovoltaic polycrystalline silicon wafers, the material removed in the brittle way is expected and the surface topography of the wafers formed with the brittle fracture is better for the texture fabricating. In this paper, a mathematical model considering the in?uences of process parameters and wire saw parameters was developed based on indentation fracture mechanics. The variations of cutting groove pro?le formed by di?erent material removal modes were also included. The e?ect of abrasives distributed on the wire saw on material removal and surface formation of polysilicon was analyzed. The results showed that most of abrasives removed material with ductile removal mode, however, the volume of the material removed by abrasive in ductile mode is less than 10% of the total removal volume. Brittle fracture removal mode was still the major way of material removal in diamond wire sawing. With the same ratio of the feed rate and wire speed, the faster feed rate and wire speed will not only improve the cutting e?ciency, but also is easier to obtain a brittle fracture surface. There is a critical angle θc for the distribution of abrasives on the wire saw surface. Only when the position angle of the abrasive removing material in brittle mode is less than θc, the brittle fracture can be formed on the wafers surface.
关键词： Diamond wire sawing,Depth of cut,Material removal mode,Photovoltaic polycrystalline silicon
更新于2025-09-23 15:23:52
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High precision mapping of single-pixel Silicon Drift Detector for applications in astrophysics and advanced light source
摘要： A Silicon Drift Detector with 3 × 3 mm2 sensitive area was designed by INFN of Trieste and built by FBK-Trento. It represents a single-pixel precursor of a monolithic matrix of multipixel Silicon Drift Detectors and, at the same time, a model of one cell Fluorescence Detector System (XAFS) for SESAME. The point-by-point mapping tests of the detector were carried out in the X-ray facilities at INAF-IAPS in Rome, equipped with a motorized two-axis micrometric positioning system. High precision characterization of this detector was done with a radioactive 55Fe source and a collimated Ti X-ray tube equipped with a Bragg crystal monocromator. The mapping in different positions and bias condition was specifically-aimed to the detailed analysis of the charge collection efficiency at the edge of the detector. The result is important to understand and verify the aspects related to the collection of the signal with respect to the position of interactions of the photons, especially in consideration of the new design and development of monolithic multipixel detectors.
关键词： SDD,Silicon drift detectors,Mapping
更新于2025-09-23 15:23:52
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Advanced methods for the optical quality assurance of silicon sensors
摘要： We describe a setup for optical quality assurance of silicon microstrip sensors. Pattern recognition algorithms were developed to analyze microscopic scans of the sensors for defects. It is shown that the software has a recognition and classification rate of >90% for defects like scratches, shorts, broken metal lines etc. We have demonstrated that advanced image processing based on neural network techniques is able to further improve the recognition and defect classification rate.
关键词： video microscope,silicon sensors,neural networks,optical quality assurance
更新于2025-09-23 15:23:52
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Development of a solid-state position sensitive neutron detector prototype based on ?6Li-glass scintillator and digital SiPM arrays
摘要： Photomultiplier tubes (PMT) have been used extensively as the photodetector of choice in scintillation based detectors for cold and thermal neutrons. However, the limitations of PMT based scintillation neutron detectors such as their sensitivity to magnetic fields or their high operating voltages (> 1 kV) have triggered the search for alternative photodetectors for these applications. Silicon photomultipliers (SiPM) operate in the single photon regime, have lower operating voltages (~ 20 - 70 V) than PMTs and are insusceptible to magnetic field. Additional features of the SiPMs like their low production cost, compactness and higher readout rates make them a potential candidate to replace the photodetector part in these developments. Therefore, we are developing a scintillation neutron detector based on SiPM technology. The detector prototype with an active detection area of 13 cm × 13 cm is aimed to be used in the future at the TREFF instrument of the Heinz Maier-Leibnitz Zentrum (MLZ) in Garching, Germany, for neutron reflectometry experiments. In this paper, we report the detector concept, its development and the simulation results for design optimization.
关键词： Geant4,Neutron scintillation detectors,Cold and thermal neutrons,Silicon Photomultipliers (SiPM)
更新于2025-09-23 15:23:52
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Multi-channel silicon photonic receiver based on compact second-order microring resonators
摘要： A monolithically integrated multi-channel receiver fabricated on the Silicon-on-Insulator (SOI) platform is demonstrated experimentally. This receiver is composed of an eight-channel thermally tunable microring resonator (MRR) filter as the wavelength division multiplexing (WDM) demultiplexer and an array of high speed waveguide-integrated Ge-on-Si photodetectors (PDs) for light detection. Second-order MRRs were utilized in each channel to obtain steeper roll-off from passband to stopband and lower crosstalk. The receiver was fabricated by using CMOS-compatible fabrication process at IME A*STAR. With the thermal tunability, the channel spacing can be adjusted according to different channel grid. Lower than ?30 dB crosstalk and higher than 50 GHz 3-dB bandwidth was obtained for the demultiplexer with a channel spacing of 150 GHz. Proof-of-principle demonstration shows that each channel is capable of operating at a data rate of 10 Gb/s, resulting in an aggregate data rate of 80 Gb/s.
关键词： Silicon photonics,Wavelength division multiplexing,Optical receivers,Microring resonators,Optical interconnects
更新于2025-09-23 15:23:52