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oe1(光电查) - 科学论文

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  • Towards High Solar Cell Efficiency with Low Material Usage: 15% Efficiency with 14 ?μm Polycrystalline Silicon on Glass

    摘要： This work showcases a bottom-up approach to creating silicon solar cells using a line-shaped laser. We report efforts to create thicker amorphous silicon passivation and contact layers as well as laser firing for low contact resistance. Collectively, a new in-house record efficiency of 15.1 % was achieved along with a clear pathway to reach 16 % efficiency with optimization of series resistance.

    关键词： Foreign substrates,Liquid phase crystallized silicon,Passivation,Silicon Heterojunction Interdigitated back contact,Laser fired contacts

    更新于2025-11-14 15:25:21

  • Aluminum-Doped Zinc Oxide as Front Electrode for Rear Emitter Silicon Heterojunction Solar Cells with High Efficiency

    摘要： Transparent conductive oxide (TCO) layers of aluminum-doped zinc oxide (ZnO:Al) were investigated as a potential replacement of indium tin oxide (ITO) for the front contact in silicon heterojunction (SHJ) solar cells in the rear emitter configuration. It was found that ZnO:Al can be tuned to yield cell performance almost at the same level as ITO with a power conversion efficiency of 22.6% and 22.8%, respectively. The main reason for the slight underperformance of ZnO:Al compared to ITO was found to be a higher contact resistivity between this material and the silver grid on the front side. An entirely indium-free SHJ solar cell, replacing the ITO on the rear side by ZnO:Al as well, reached a power conversion efficiency of 22.5%.

    关键词： photovoltaics,silicon heterojunction,rear emitter,transparent conductive oxide

    更新于2025-11-14 15:25:21

  • Effect of front TCO on the performance of rear-junction silicon heterojunction solar cells: Insights from simulations and experiments

    摘要： In this study we make a detailed comparison between indium tin oxide (ITO), aluminum-doped zinc oxide (ZnO:Al) and hydrogenated indium oxide (IO:H) when applied on the illuminated side of rear-junction silicon heterojunction (SHJ) solar cells. ITO being the state of the art material for this application, ZnO:Al being an attractive substitute due to its cost effectiveness and IO:H being a transparent conductive oxide (TCO) with high-mobility and excellent optical properties. Through numerical simulations, the optically optimal thicknesses for a double layer anti-reflective coating system, consisting of the respective TCO and amorphous silicon oxide (a-SiO2) capping layers are defined. Through two-dimensional electrical simulations, we present a comparison between front-junction and rear-junction devices to show the behavior of series resistance (Rs) in dependence of the TCO sheet resistance (Rsh) and the device effective lifetime (τeff). The study indicates that there is a τeff dependent critical TCO Rsh value, above which, the rear-junction device will become advantageous over the front-junction design in terms of Rs. Solar cells with the respective layers are analyzed. We show that a thinner TCO optimized layer will result in a benefit in cell performance when implementing a double layer anti-reflective coating. We conclude that for a highest efficiency solar cell performance, a high mobility TCO, like IO:H, is required as the device simulations show. However, the rear-junction solar cell design permits the implementation of a lower conductive TCO in the example of the cost-effective ZnO:Al with comparable performance to the ITO, opening the possibility for substitution in mass production.

    关键词： Transparent conductive oxide,Sheet resistance,Series resistance,Rear-junction,Silicon heterojunction,Anti-reflective coating

    更新于2025-10-22 19:40:53

  • Advanced Graphene-Based Transparent Conductive Electrodes for Photovoltaic Applications

    摘要： New architectures of transparent conductive electrodes (TCEs) incorporating graphene monolayers in different configurations have been explored with the aim to improve the performance of silicon-heterojunction (SHJ) cell front transparent contacts. In SHJ technology, front electrodes play an important additional role as anti-reflectance (AR) coatings. In this work, different transparent-conductive-oxide (TCO) thin films have been combined with graphene monolayers in different configurations, yielding advanced transparent electrodes specifically designed to minimize surface reflection over a wide range of wavelengths and angles of incidence and to improve electrical performance. A preliminary analysis reveals a strong dependence of the optoelectronic properties of the TCEs on (i) the order in which the different thin films are deposited or the graphene is transferred and (ii) the specific TCO material used. The results shows a clear electrical improvement when three graphene monolayers are placed on top on 80-nm-thick ITO thin film. This optimum TCE presents sheet resistances as low as 55 ?/sq and an average conductance as high as 13.12 mS. In addition, the spectral reflectance of this TCE also shows an important reduction in its weighted reflectance value of 2–3%. Hence, the work undergone so far clearly suggests the possibility to noticeably improve transparent electrodes with this approach and therefore to further enhance silicon-heterojunction cell performance. These results achieved so far clearly open the possibility to noticeably improve TCEs and therefore to further enhance SHJ contact-technology performance.

    关键词： transparent electrodes,silicon heterojunction solar devices,graphene

    更新于2025-10-22 19:40:53

  • A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact <i>in situ</i> with efficiencies close to 23%

    摘要： We present a novel process sequence to simplify the rear‐side patterning of the silicon heterojunction interdigitated back contact (HJ IBC) cells. In this approach, interdigitated strips of a‐Si:H (i/p+) hole contact and a‐Si:H (i/n+) electron contact are achieved by partially etching a blanket a‐Si:H (i/p+) stack through an SiOx hard mask to remove only the p+ a‐Si:H layer and replace it with an n+ a‐Si:H layer, thereby switching from a hole contact to an electron contact in situ, without having to remove the entire passivation. This eliminates the ex situ wet clean after dry etching and also prevents re‐exposure of the crystalline silicon surface during rear‐side processing. Using a well‐controlled process, high‐quality passivation is maintained throughout the rear‐side process sequence leading to high open‐circuit voltages (VOC). A slightly higher contact resistance at the electron contact leads to a slightly higher fill factor (FF) loss due to series resistance for cells from the partial etch route, but the FF loss due to J02‐type recombination is lower, compared with reference cells. As a result, the best cell from the partial etch route has an efficiency of 22.9% and a VOC of 729 mV, nearly identical to the best reference cell, demonstrating that the developed partial etch process can be successfully implemented to achieve cell performance comparable with reference, but with a simpler, cheaper, and faster process sequence.

    关键词： interdigitated back contact (IBC),H2 plasma,amorphous silicon,heterojunction,dry etch,process simplification,NF3/Ar plasma,in situ processing

    更新于2025-09-23 15:23:52

  • Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions

    摘要： Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.

    关键词： porous silicon,heterojunction,anodization,electrochemical deposition

    更新于2025-09-23 15:22:29

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Alleviating performance and cost constraints in silicon heterojunction cells with HJT 2.0

    摘要： When considering silicon heterojunction technology (HJT) for mass production the most frequently expressed reservations are related to the performance and cost constraints the standard TCO on the cell front side namely thin indium tin oxide (ITO) constitutes. We address these concerns with our HJT 2.0 concept in which the front electrode is made of a bi-layer of ITO that is supplemented by a silicon nitride (SiN) layer. This cell concept was developed to yield an increase in efficiency of typically 0.2% absolute due to improved cell current and a cost saving in the range of 30-40% with respect to cost of ownership (CoO).

    关键词： solar cell efficiency,silicon heterojunction technology,cost saving,silicon nitride,indium tin oxide,HJT 2.0

    更新于2025-09-23 15:21:01

  • Damp-Heat-Stable, High-Efficiency, Industrial-Size Silicon Heterojunction Solar Cells

    摘要： Silicon heterojunction (SHJ) solar cells hold the power conversion efficiency (PCE) record among crystalline solar cells. However, amorphous silicon is a typical high-entropy metastable material. Damp-heat aging experiments unveil that the amorphous/crystalline silicon interface is susceptible to moisture, which is potentially the biggest stumbling block for mass production. By capping SiNx and SiOx dielectrics, the absolute PCE degradation is predicted to be only (cid:1)0.6% after a 30-year installation. This demonstrates the SHJ solar cell is a highly promising candidate for next-generation photovoltaics.

    关键词： High efficiency,Amorphous silicon,Mass production,Damp-heat stability,Silicon heterojunction solar cells

    更新于2025-09-23 15:21:01

  • Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer

    摘要： In this work, to ameliorate the quantum e?ciency (QE), we made a valuable development by using wide band gap material, such as lithium ?uoride (LiFx), as an emitter that also helped us to achieve outstanding e?ciency with silicon heterojunction (SHJ) solar cells. Lithium ?uoride holds a capacity to achieve signi?cant power conversion e?ciency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium ?uoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also bene?cial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiFx encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band o?set to explore the consequence of work function in the LiFx as a carrier selective contact layer. We were able to achieve a maximum power conversion e?ciency (PEC) of 23.74%, ?ll factor (FF) of 82.12%, Jsc of 38.73 mA cm?2, and Voc of 741 mV by optimizing the work function and thickness of LiFx layer.

    关键词： electric ?eld,silicon heterojunction solar cell,lithium ?uoride,electron selectivity contact layer,work function

    更新于2025-09-23 15:21:01

  • Laser firing in silicon heterojunction interdigitated back contact architecture for low contact resistance

    摘要： This work reports a laser firing technique applied to completed silicon heterojunction interdigitated back contact solar cells in order to lower contact resistance. Previously, the implementation of a-Si:H(i) at the electron contact of polycrystalline silicon solar cells on glass substrates led to an increase in series resistance. The cell architecture with the current record efficiency of 14.2% (with illumination through glass) utilizes only an a-Si:H(nt) layer (cid:0) 2 of short circuit current density is lost due to electrical shading under the electron contact and 2–2.9 mA cm [1,2]. The goal of implementing an a-Si:H(i) layer and laser firing at this contact is to achieve low contact resistance at fired spots while preserving a-Si:H(i) passivation in unfired regions. After the laser firing, VOC was (cid:0) 2 loss in JSC. In the best retained, while up to 14% absolute increase in FF was obtained with a mere 0.2 mA cm (cid:0) 2 loss in JSC. Two laser sources were used to first performing cell, a 72.1% FF was achieved with a 0.7 mA cm ablate a part of the silver contact metal, and then to laser fire through the Si(n)/a-Si:H(i/nt)/ITO/Ag contact. (cid:0) 2 (355 nm, picosecond pulse duration) and The optimal laser fluence was found to be 1.1–0.5 J cm (cid:0) 2 (532 nm, nanosecond pulse duration), respectively. The upper limit on specific contact resistance 4.4–5.2 J cm in the laser fired spots was calculated to be 38 ? 20 mΩcm2 as a conservative estimate.

    关键词： Liquid phase crystallized silicon,Passivation,Interdigitated back contact,Foreign substrates,Laser fired contacts,Silicon heterojunction

    更新于2025-09-23 15:19:57