摘要： In this work, to ameliorate the quantum e?ciency (QE), we made a valuable development by using wide band gap material, such as lithium ?uoride (LiFx), as an emitter that also helped us to achieve outstanding e?ciency with silicon heterojunction (SHJ) solar cells. Lithium ?uoride holds a capacity to achieve signi?cant power conversion e?ciency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium ?uoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also bene?cial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiFx encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band o?set to explore the consequence of work function in the LiFx as a carrier selective contact layer. We were able to achieve a maximum power conversion e?ciency (PEC) of 23.74%, ?ll factor (FF) of 82.12%, Jsc of 38.73 mA cm?2, and Voc of 741 mV by optimizing the work function and thickness of LiFx layer.