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Study of silicon photomultiplier performance in external electric fields
摘要： We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
关键词： Cryogenic detectors,Double-beta decay detectors,Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc),Noble liquid detectors (scintillation, ionization, double-phase)
更新于2025-09-04 15:30:14
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Improving the sensitivity of <i>J</i> coupling measurements in solids with application to disordered materials
摘要： It has been shown previously that for magic angle spinning (MAS) solid state NMR the refocused INADEQUATE spin-echo (REINE) experiment can usefully quantify scalar (J) couplings in disordered solids. This paper focuses on the two z filter components in the original REINE pulse sequence, and investigates by means of a product operator analysis and fits to density matrix simulations the effects that their removal has on the sensitivity of the experiment and on the accuracy of the extracted J couplings. The first z filter proves unnecessary in all the cases investigated here and removing it increases the sensitivity of the experiment by a factor ～1.1–2.0. Furthermore, for systems with broad isotropic chemical shift distributions (namely whose full widths at half maximum are greater than 30 times the mean J coupling strength), the second z filter can also be removed, thus allowing whole-echo acquisition and providing an additional √2 gain in sensitivity. Considering both random and systematic errors in the values obtained, J couplings determined by fitting the intensity modulations of REINE experiments carry an uncertainty of 0.2–1.0 Hz (～1?10 %).
关键词： solid state NMR,disordered materials,REINE experiment,J coupling,sensitivity improvement
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Surge current capability of SiC MOSFETs in AC distribution systems
摘要： Whereas short circuit current and time ratings for power converter applications are often stated by SiC device manufacturers, surge current capability for AC electrical apparatus applications are rarely available. This paper present the experimental validation of surge current capability of selected SiC devices for low voltage AC distribution system applications. Because AC electrical apparatus, such as relays, contactors, and circuit breakers, have a different set of system parameters and requirements compared to traditional power converter applications, power semiconductor devices need to be validated from a different point of view. In fact, robustness to inductive short circuit currents, inrush currents, short and long time overload are some of the basic requirements for the utilization of WBG devices for these applications. In this paper, we compare the performance of different SiC MOSFETs under different types of AC waveform conditions.
关键词： semiconductor device characterization,temperature measurement,solid state circuit breaker,WBG semiconductor devices,overload capability,surge current,SiC MOSFET,electrical apparatus
更新于2025-09-04 15:30:14