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Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
摘要： The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
关键词： space-charge-limited conduction,bipolar resistive switching,BiFeO3 films,sputter
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - Saint Petersburg, Russia (2018.10.22-2018.10.23)] 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - Features of Space Charge Relaxation in a Polyimide Printed Circuit Board
摘要： Polyimide films are widely used as substrates for printed circuit boards. The process of space charge accumulating in dielectric substrates is not highly desirable, since space charge distorted the parameters of the electrical circuits. This work is devoted to the study of the accumulation and relaxation of charge in films of thermoplastic polyimide R-BAPB with different degrees of crystallinity, in order to reduce the accumulated charge and the time of its relaxation. Relaxation mechanisms are analyzed and methods for reducing the relaxation time of the space charge are determined.
关键词： PCB,conductivity,electret,homocharge,relaxation,corona discharge,space charge,crystallinity,polyimide
更新于2025-09-23 15:22:29
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Suppression of electron emission from cathode in photoemission-assisted Ar plasma
摘要： In order to improve the efficiency of the surface flattening process using photoemission-assisted plasma ion source, current-bias voltage characteristic and Ar+ ions/Ar atoms ratio in the plasma was investigated. The glow discharge starting voltage decreases by UV irradiation and a great number of Ar+ ions were irradiated to the substrate. On the other hand in PA Townsend discharge, the number of Ar+ ions reached at the substrate is smaller than that in glow discharge due to space charges near the cathode substrate.
关键词： space charge effect,Langmuir probe,photoemission-assisted plasma
更新于2025-09-23 15:21:21
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Effect of the Interface Improved by Self-Assembled Aromatic Organic Semiconductor Molecules on Performance of OLED
摘要： This work focuses on characterization the performance of enhanced interface of organic light emitting diode (OLED) device by Self-assembled Monolayer (SAM) technique. SAM technique is popular in order to overcome the weak bonding at the organic/inorganic interface in OLED. New generation of SAM molecules, phenyl-benzoic-acid (PBA, 4-(9H-carbazol-9-il) benzoic acid (MZ39), 4-(2,5-di-2thienyl-1H-pyrrol-1-il) benzoic acid (MZ25) were coated on between Indium Tin Oxide (ITO). The two con?guration of ITO/SAM/TPD/Al and ITO/TPD/Al diode were fabricated as hole-only device to show the contribution of SAM layer on the hole mobility calculated by Space Charge Limited Current (SCLC) technique. The optical characterization of OLED devices with con?guration ITO/TPD/Alq3/Al and ITO/SAM/TPD/Alq3/Al was performed to see the effect of aromatic SAM molecules on the luminance and quantum ef?ciency. Especially, the SAM modi?ed OLED has a maximum luminance of 397 cd m?2. All devices containing SAM layer showed better performance than reference one.
关键词： Indium Tin Oxide (ITO),quantum efficiency,OLED,luminance,Space Charge Limited Current (SCLC),Self-assembled Monolayer (SAM)
更新于2025-09-23 15:21:01
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Electrical properties of thin films deposited from TMS/O <sub/>2</sub> in Microwave Multipolar Plasma reactor
摘要： Thin films have been deposited from pure Tetramethylsilane and a mixture of Tetramethylsilane and oxygen (TMS/O2). The addition of oxygen proportion to Tetramethylsilane vapors leads to the change in film structure which varies from organic to inorganic character close to SiOx-like film [1]. The electrical characterisation using Metal-Insulating-Metal structure permits the study of current-voltage (I (V)) curves behaviours. The results suggest that the carrier transport in the deposited films is limited by a space charge conduction mechanism.
关键词： Thin films,Oxygen,Space charge conduction,Electrical properties,Tetramethylsilane
更新于2025-09-23 15:21:01
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A Model for Surface Space Charge Mediated Ultraviolet Photoresponse in MgZnO Thin Films and Its Experimental Verification
摘要： We propose a model based on the evolution of electron and surface charge density to describe the ultraviolet photoresponse in MgZnO thin films. The MgZnO surface contains a high density of surface bound states for electrons due to chemisorption of oxygen molecules, resulting in formation of a surface depletion region. We take into account the change in both conducting volume and electron density in the nondepleted part of the MgZnO thin films upon UV illumination to model temporal variation of photocurrent. We have deposited a set of MgZnO thin films on Al electrodes by pulsed laser deposition at different oxygen pressures to verify the model. With increasing oxygen pressure, dark current, peak responsivity, and response time decreased while the ON?OFF ratio and UV to visible rejection ratio increased, implying different levels of oxygen chemisorption. The proposed model has been successfully used to simulate the temporal decay of the photocurrent in the deposited devices.
关键词： model for photocurrent decay,ultraviolet photoresponse,MgZnO thin films,oxygen chemisorption,surface space charge
更新于2025-09-23 15:19:57
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Dynamic space-charge-controlled field emission model of current conduction in metala??insulatora??semiconductor capacitors
摘要： A dynamic space-charge-controlled field emission (SCC-FE) model that considers temporal insulator charge variations caused by voltage stress is developed for analyzing the current conduction in insulators in the entire voltage range of measurement, yielding good agreement between experiments and simulations. The usage of prestressed samples in this analysis is essential for accurately estimating the electron affinities of insulators, yielding 1.65 and 1.93 eV as the estimates for Al2O3 films formed on GaN by atomic-layer deposition (ALD) at 200 and 450 °C, respectively, and 1.65 and 1.83 eV for those on SiO2/Si, respectively. Through the bias instability analysis using the method developed here, the voltage-stress tolerance of both Si and GaN metal–insulator–semiconductor (MIS) capacitors with ALD Al2O3 films was found to be enhanced by the high-temperature (450 °C) ALD. The analysis also revealed the fact that the voltage-stress-induced flatband voltage shift of GaN capacitors with the high-temperature Al2O3 films is mainly caused by the Al2O3 charges near the substrate, hence providing a clue to even better bias stability of the GaN capacitors. With possible applications to other wide-bandgap semiconductor (WBGS) capacitors, the dynamic SCC-FE analysis developed here will play an essential role in analyzing not only gate insulator characteristics but also many reliability issues of various WBGS MIS field-effect transistors.
关键词： Al2O3 films,bias instability,atomic-layer deposition,dynamic space-charge-controlled field emission,metal–insulator–semiconductor capacitors
更新于2025-09-23 15:19:57
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Trap-controlled space-charge-limited conduction in amorphous As <i> <sub/>x</sub></i> Te <sub/> 1a?? <i>x</i> </sub> thin films with ovonic threshold switching
摘要： Ovonic threshold switching (OTS) in chalcogenide materials has attracted considerable interest for application in electronic devices to suppress leakage current in cross-point array structures. Although OTS appears to originate from an electronic process, the exact mechanism of OTS remains unclear with respect to sub-threshold conduction and threshold switching. In this study, we demonstrated that the sub-threshold conduction characteristics is affected by the structures of the exponentially distributed trap states in amorphous chalcogenide materials. Using binary AsxTe1?x thin films, we investigated the effects of trap distribution on OTS characteristics, analyzed the band structures, and developed a trap-controlled space-charge-limited conduction model.
关键词： Ovonic threshold switching,space-charge-limited conduction,amorphous AsxTe1?x thin films,chalcogenide materials
更新于2025-09-23 15:19:57
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Space charge limited conduction in pulsed laser deposited BaTiO3/LaNiO3 hetero-junctions
摘要： We report the charge transport mechanism in BaTiO3 (BTO) thin film deposited on LaNiO3 (LNO) buffer layer using pulsed laser deposition technique thus, forming the metal – insulator – metal junction (Au/BTO/LNO). The temperature dependent Current density- Voltage (J-V) characteristics were measured, analyzed and compared with the La0.67Ca0.33MnO3 (LCMO) buffered BTO film (Au/BTO/LCMO). Although the mechanism was found to be space charge limited conduction (SCLC) as in case of BTO/LCMO but the absence of Ohmic region in Log J-Log V plot indicates higher injection rate. Various parameters such as trap density, activation energy, and ratio of free to trapped carriers (h) were extracted out from the fitted J-V plot and subsequently their temperature dependence was studied and compared with BTO/LCMO. Higher current density, lower activation energy, lower trap density and higher ratio of free to trapped carriers (h) were observed in BTO/LNO in contrast to BTO/LCMO. Furthermore, the lower activation energy indicates the presence of shallow trap level.
关键词： Non-volatile memories,Barium titanate,Metal-Insulator-Metal junction,Space charge limited conduction,Pulsed laser deposition
更新于2025-09-23 15:19:57
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[IEEE 2019 URSI Asia-Pacific Radio Science Conference (AP-RASC) - New Delhi, India (2019.3.9-2019.3.15)] 2019 URSI Asia-Pacific Radio Science Conference (AP-RASC) - Generation of Pulsed Fiber Laser: ns to fs domain
摘要： Thermionic energy converter (TEC) is a heat engine that generates electricity directly using heat as its source of energy and electron as its working fluid. Despite having a huge potential as an efficient direct energy conversion device, the progress in vacuum-based thermionic energy converter development has always been hindered by the space charge problem and the unavailability of materials with low work function. It is only recently that researchers have started to look back into this technology as recent advances in manufacturing technology techniques have made it possible to solve these problems, making TECs a viable option in replacing current energy production systems. The focus of this paper is to review the challenges of producing efficient and practical TECs, along with recent findings and developments in mitigating these challenges. Furthermore, this paper looked into potential applications of TECs, based on recent works and technologies, and found that, with certain improvements, it can be applied in many sectors.
关键词： nanowires,work function,thermionic energy conversion (TEC),space charge,Energy conversion efficiency
更新于2025-09-23 15:19:57