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Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
摘要： The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
关键词： space-charge-limited conduction,bipolar resistive switching,BiFeO3 films,sputter
更新于2025-09-23 15:22:29
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Trap-controlled space-charge-limited conduction in amorphous As <i> <sub/>x</sub></i> Te <sub/> 1a?? <i>x</i> </sub> thin films with ovonic threshold switching
摘要： Ovonic threshold switching (OTS) in chalcogenide materials has attracted considerable interest for application in electronic devices to suppress leakage current in cross-point array structures. Although OTS appears to originate from an electronic process, the exact mechanism of OTS remains unclear with respect to sub-threshold conduction and threshold switching. In this study, we demonstrated that the sub-threshold conduction characteristics is affected by the structures of the exponentially distributed trap states in amorphous chalcogenide materials. Using binary AsxTe1?x thin films, we investigated the effects of trap distribution on OTS characteristics, analyzed the band structures, and developed a trap-controlled space-charge-limited conduction model.
关键词： Ovonic threshold switching,space-charge-limited conduction,amorphous AsxTe1?x thin films,chalcogenide materials
更新于2025-09-23 15:19:57
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Space charge limited conduction in pulsed laser deposited BaTiO3/LaNiO3 hetero-junctions
摘要： We report the charge transport mechanism in BaTiO3 (BTO) thin film deposited on LaNiO3 (LNO) buffer layer using pulsed laser deposition technique thus, forming the metal – insulator – metal junction (Au/BTO/LNO). The temperature dependent Current density- Voltage (J-V) characteristics were measured, analyzed and compared with the La0.67Ca0.33MnO3 (LCMO) buffered BTO film (Au/BTO/LCMO). Although the mechanism was found to be space charge limited conduction (SCLC) as in case of BTO/LCMO but the absence of Ohmic region in Log J-Log V plot indicates higher injection rate. Various parameters such as trap density, activation energy, and ratio of free to trapped carriers (h) were extracted out from the fitted J-V plot and subsequently their temperature dependence was studied and compared with BTO/LCMO. Higher current density, lower activation energy, lower trap density and higher ratio of free to trapped carriers (h) were observed in BTO/LNO in contrast to BTO/LCMO. Furthermore, the lower activation energy indicates the presence of shallow trap level.
关键词： Non-volatile memories,Barium titanate,Metal-Insulator-Metal junction,Space charge limited conduction,Pulsed laser deposition
更新于2025-09-23 15:19:57
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Analog Resistive Switching and Synaptic Functions in WOx/TaOx Bilayer Through Redox Induced Trap-Controlled Conduction
摘要： In this study, the abrupt set/reset behavior of the Ta/TaOx/Pt resistive switching (RS) device is reformed to a gradual mode by inserting a WOx layer between the TaOx active layer and the Ta top electrode. With the WOx acting as a redox layer to exchange oxygen vacancies at the interface, the defect states in TaOx are regulated via applying bias and the analog resistive switching is rationalized by trap-controlled space-charge-limited conduction mechanism. Continual change in device resistance can be achieved by repeated voltage sweeping. Based on the analog RS behavior, the potentiation and depression behaviors with excellent linearity are also demonstrated by identical voltage pulse stimulation and the operating current is maintained at less than 10?6 A. Furthermore, essential synaptic functions, such as paired-pulse facilitation (PPF), long- and shot-term potentiation (LTP and STP), experience dependent plasticity (EDP) and learning-relearning are also demonstrated to mimic the biological synapses for the application of neuromorphic computing.
关键词： synaptic function,tungsten oxide,space-charge-limited conduction,Analog resistive switching,redox layer
更新于2025-09-11 14:15:04
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Strain induced enhancement of erasable domain wall current in epitaxial BiFeO <sub/>3</sub> thin films
摘要： The characteristic of electronic transport at the ferroelectric domain boundary is intensively studied for the potential application in random access memory due to its unique resistance switching mechanism along with polarization reversal. Such high conductivity in artificially created domain walls is not only affected by the material defect chemistry, such as oxygen vacancies, but also pertinent to the multiple polarization states of the sample. Here, we show the enhanced domain wall current in BiFeO3 thin films that could be obtained by the optimization of epitaxial strains from substrates. The leakage current analysis reveals the electronic transport of domain wall current in line with the space-charge-limited conduction mechanism. It is believed that the uncompensated polarization charge arouses the band bending at the domain boundary, which profoundly affects the wall current. Free carriers are easily concentrated in the domain boundary region for the compensation of the enhanced polarization by the strain, resulting in an abrupt increase of the conductivity.
关键词： ferroelectric domain boundary,BiFeO3 thin films,space-charge-limited conduction,epitaxial strains,electronic transport
更新于2025-09-09 09:28:46