研究目的
Investigating the effects of inserting a WOx layer between the TaOx active layer and the Ta top electrode on the resistive switching behavior of the device and its application in mimicking biological synapses for neuromorphic computing.
研究成果
The insertion of a WOx redox layer between the TaOx active layer and the Ta top electrode successfully modifies the resistive switching behavior from abrupt to gradual, enabling analog switching and mimicking essential synaptic functions. This modification is attributed to the redox-induced trap-controlled space-charge-limited conduction mechanism, offering a promising approach for neuromorphic computing applications.
研究不足
The study is limited by the need for an electroforming process before resistive switching operation and the specific material system (WOx/TaOx) under investigation. The retention characteristics of the device, while acceptable for synaptic operations, need improvement for non-volatile memory applications.
1：Experimental Design and Method Selection:
The study involves the fabrication of Ta/TaOx/Pt and Ta/WOx/TaOx/Pt devices to compare their resistive switching behaviors. The methodology includes the use of reactive RF sputtering for depositing the oxide layers and DC sputtering for the top electrode.
2：Sample Selection and Data Sources:
The samples are fabricated on a silicon substrate with a SiO2 layer, using Pt/Ti as the bottom electrode. The thickness of the films is confirmed by TEM cross-sectional imaging.
3：List of Experimental Equipment and Materials:
The equipment includes RF and DC sputtering systems for film deposition, and Agilent 4156C and B1530A for electrical characterization. Materials include Ta, WOx, TaOx, Pt, and Ti.
4：Experimental Procedures and Operational Workflow:
The process involves depositing the bottom electrode, the switching layer (TaOx or WOx/TaOx), and the top electrode (Ta), followed by electrical characterization using DC sweep and AC pulse measurements.
5：Data Analysis Methods:
The I-V characteristics are analyzed to understand the resistive switching mechanism, with a focus on trap-controlled space-charge-limited conduction.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
