- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
A ambient-air sulfurization process for Cu2ZnSnS4 thin film solar cells: self-creating inert atmosphere using sulfur vapor
摘要： Sulfurization is an inevitable process for depositing high-quality Cu2ZnSnS4 (CZTS) thin films, which usually implements under high vacuum or inert atmosphere. In this work, a novel ambient-air sulfurization was designed for fabricating CZTS absorber, aiming to eliminate the requirement of complex vacuum equipment. The sulfur powder and oxide precursor films were enclosed in a quartz container, in which the inert-atmosphere was self-created during the annealing. The sulfurization mechanism was studied carefully through varying the amount of sulfur powder. Finally, the optimized CZTS thin films showed pure Kesterite phase, large grains as well as suitable band gap. The device fabricated with the ambient-air sulfurized CZTS thin films exhibited efficiency of 3% with Voc = 0.52V, Jsc = 12.61mA/cm2, and FF = 46.6%. This study offers a facile sulfurization route for CZTS thin films and the successful design principle could be applied in other absorber materials.
关键词： solar cell,Cu2ZnSnS4,ambient-air,thin films,sulfurization
更新于2025-09-11 14:15:04
-
Superficial composition engineering for oxide nanoparticles derived Cu2ZnSn(S, Se)4 solar cells by a three-step annealing process
摘要： In this work, a three-step (sulfurization-selenization-sulfurization) annealing process was designed to optimize the surface constitution of Cu2ZnSn(S, Se)4 (CZTSSe) thin films, which was prepared by oxide nanoparticles-based approach. The devices with the Mo/CZTSSe/CdS/ZnMgO/ZnO:Al/Al structure were fabricated and their performances were studied. The additional post-sulfurization with low toxicity sulfur powder has negligible impact on the structure, morphology and composition of CZTSSe bulk, however, it improves open circuit voltage of device significantly. The open circuit voltage can be increased significantly from 408 mV (without surface sulfurization) to 497 mV (with surface sulfurization). This is benefited from the increase of surficial sulfur content and the broadening of the surface band-gap of the CZTSSe thin film. The result is confirmed by X-ray photoelectron spectroscopy analysis. Such a crucial three-step annealing process promotes the power conversion efficiency from 4.71% (2-step) to 6.37% (3-step), which is the champion efficiency of oxide precursor derived CZTSSe solar cell.
关键词： Thin films,Cu2ZnSn(S, Se)4,Solar energy materials,Post-sulfurization
更新于2025-09-11 14:15:04
-
The phase optimization, optical and electrical properties of kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film prepared by single target RF magnetron sputtering technique for solar cell application.
摘要： Cu2ZnSnS4 (CZTS) thin film was prepared by RF sputtering technique from a single quaternary target by optimizing RF power, in-situ substrate temperature and post deposition annealing temperature. The single phase formation of crystalline CZTS thin film has been verified at a particular optimized condition by characterizing through X-ray diffraction, Raman selected area electron diffraction study. The surface properties such as particle size, shape and roughness and elemental composition of amorphous and crystalline phase of CZTS studied by atomic force microscope, scanning electron microscope and energy dispersive analysis of x-rays. The optical absorption and photoluminescence studies of post-deposition annealed film prove the defect free and single phase CZTS formation. The band gap calculation for crystalline CZTS showed band gap of 1.49eV calculated from the Tauc plot. The electrical properties of optimized CZTS thin film has been studied from Hall effect measurement showing P-type conductivity with better carrier concentration and Hall mobility.
关键词： Optical properties,Electrical properties,Phase optimization without post sulfurization process,Solar cell material,CZTS thin film,Single target RF magnetron sputtering
更新于2025-09-11 14:15:04
-
Structural, morphological and optical properties of Cu2ZnxFe1-xSnS4 thin films grown by thermal evaporation
摘要： In this study, Cu2ZnxFe1-xSnS4 (CZFTS) (0≤x≤1) thin films were grown under vacuum evaporation on unheated glass substrates followed by sulfurization at 400 °C. The effects of sulfurization on the structural, morphological and optical properties were investigated for CZFTS material by varying Fe content. Crystal structure and phase of CZFTS thin films were analyzed by X-ray diffraction technique and Raman spectroscopy. In addition, the elemental composition and the stoichiometry of films were studied using energy dispersive spectroscopy. Surface morphology of samples was examined by scanning electron microscopy. Optical properties such as absorption coefficient, and gap energies were determined by the measurement of transmittance and reflectance in the spectral range 300-1800 nm. X-ray analysis indicates that all sulfurized CZFTS films present a polycrystalline nature and exhibit a preferential orientation along (112) plane. Cu2FeSnS4 (x=0) and Cu2ZnSnS4 (x=1) crystallize in stannite structure with I-42m and kesterite structure with I-4 space group, respectively. Raman analysis and elemental composition confirm that only the Cu2ZnSnS4 (x=1) and CZ0.75F0.25TS (x=0.75) phases are present with good crystallinity. Transmittance and reflectance spectra revealed that the films are homogenous mostly for x=0.75 and 1. Structural and optical parameters like crystallite size, absorption coefficient and band gaps were estimated for all the x values.
关键词： Sulfurization,Scanning electron microscopy,X-ray diffraction,Copper zinc iron tin sulfide,Evaporation,Thin films
更新于2025-09-09 09:28:46
-
<i>In situ</i> topotactic fabrication of direct Z-scheme 2D/2D ZnO/Zn <sub/>x</sub> Cd <sub/>1?x</sub> S single crystal nanosheet heterojunction for efficient photocatalytic water splitting
摘要： Direct Z-scheme heterojunction can effectively enhance the photocatalytic activity due to its low carrier recombination rate and high redox ability. In this study, a 2D/2D ZnO/ZnxCd1?xS single crystal nanosheet heterojunction is synthesized in situ by topotactic sulfurization/oxidization pyrolysis of Zn/Cd/Al layer double hydroxides (LDHs). Its unique structure provides not only numerous intimate interfaces but also a direct Z-scheme junction. The in situ topotactic fabrication of ZnO by the oxidation process causes some Zn ions to dissolve out from the Zn0.67Cd0.33S solid solution nanosheets with increase in annealing temperature and time. The longer the time for oxidation, the more ZnO is obtained. The formation of ZnO yields 2D/2D ZnO/ZnxCd1?xS single crystal nanosheet heterojunction, which increases the visible light absorption and boosts the separation of photogenerated carriers. The ZnO/ZnxCd1?xS-4 single crystal nanosheet heterojunction presents the highest photocatalytic activity under visible light irradiation (38.93 mmol h?1 g?1), which is nearly 16.93 times higher than that of Zn0.67Cd0.33S-300, and an external quantum efficiency of 40.97% at λ = 420 nm. The proposed synthetic route for the construction of 2D/2D ZnO/ZnxCd1?xS single crystal nanosheet provides a direct Z-scheme structure with highly efficient photocatalytic hydrogen evolution activity.
关键词： 2D/2D ZnO/ZnxCd1?xS,photocatalytic water splitting,Zn/Cd/Al layer double hydroxides,Direct Z-scheme heterojunction,topotactic sulfurization/oxidization pyrolysis
更新于2025-09-04 15:30:14