研究目的
To optimize the surface constitution of Cu2ZnSn(S, Se)4 (CZTSSe) thin films for solar cells using a three-step annealing process to improve the open circuit voltage and power conversion efficiency.
研究成果
The three-step annealing process significantly improves the open circuit voltage and power conversion efficiency of CZTSSe solar cells by optimizing the surface constitution of the thin films. This method presents a promising approach for enhancing the performance of oxide precursor-derived CZTSSe solar cells.
研究不足
The study focuses on the surface modification of CZTSSe thin films and its impact on solar cell performance, but does not extensively explore the scalability of the process or the long-term stability of the devices.
1：Experimental Design and Method Selection:
A three-step annealing process (sulfurization-selenization-sulfurization) was designed to optimize the surface constitution of CZTSSe thin films.
2：Sample Selection and Data Sources:
Oxide precursor thin films were prepared by depositing oxide ink on a molybdenum-coated soda-lime glass.
3：List of Experimental Equipment and Materials:
Metal salts for oxide ink preparation, sulfur and selenium powders for annealing, and various characterization tools including XRD, SEM, EDX, UV–vis spectrophotometer, XPS, and a solar simulator for J-V testing.
4：Experimental Procedures and Operational Workflow:
The precursor films were sulfurized, selenized, and then post-sulfurized under controlled conditions. The films were then characterized and fabricated into solar cells.
5：Data Analysis Methods:
The performance of the solar cells was analyzed based on J-V curves, and the films were characterized using various spectroscopic and microscopic techniques.
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