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Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals
摘要： Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured with femtosecond transient reflection spectroscopy. The hot carrier cooling process is found to occur through phonon scattering. The surface recombination velocity and ambipolar diffusion coefficient are extracted from fits to the pump energy-dependent transient reflection kinetics using a free carrier diffusion model. The extracted surface recombination velocity is approximately an order of magnitude larger than that for methylammonium lead-iodide perovskites, suggesting that surface recombination is a principal source of photocarrier loss in InSe. The extracted ambipolar diffusion coefficient is consistent with previously reported values of InSe carrier mobility.
关键词： transient reflection spectroscopy,hot carrier dynamics,Layered indium selenide,solar cell,van der Waals solid,surface recombination velocity,ambipolar diffusion coefficient
更新于2025-09-23 15:22:29
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Performance analysis of c-Si heterojunction solar cell with passivated transition metal oxides carrier-selective contacts
摘要： Transition metal oxides (TMOs) as passivating carrier-selective contact layers are investigated for silicon heterojunction solar cells. MoOx as hole-selective layer and TiOx as an electron-selective layer are explored in detail to design a high-efficiency silicon heterojunction solar cell without any specified surface passivation layer. The thickness and optical transparency of the MoOx hole-selective layer have been evaluated through optical simulation. The impact of TMOs’ work function and their passivation quality has been examined in detail to extract the maximum conversion efficiency from silicon heterojunction solar cells. To increase the optical absorption in c-Si, the micro–nanopillar structure has also been implemented. It has been found that the barrier height at the TMO/silicon heterocontact plays a significant role in the overall performance improvement of the solar cell. The optimized cell design without doping and separate passivating layer can achieve a power conversion efficiency of ~ 22%. Our findings open the potential pathways and opportunities to obtain simplified heterojunction solar cells at lower temperatures and without impurity doping.
关键词： Surface recombination velocity,Carrier-selective contact layers,Transition metal oxides,c-Si heterojunction solar cells
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - On the impact of the metal work function on the recombination in passivating contacts using quasi-steady-state photoluminescence
摘要： Understanding the impact of metal contacts on the recombination within a passivated silicon wafer is crucial for the optimization of various photovoltaic devices such as passivating-contact-based solar cells. To investigate the effect of the metal work function, a selection of metals is applied to aluminum-oxide-passivated n-type crystalline silicon wafers. The saturation current density of the metalized contact (J0m) is determined using the quasi-steady-state photoluminescence method and used as a figure of merit to quantify the effect. We find that J0m increases with the metal work function and that this effect is modulated with the passivation layer thickness. It is more pronounced for thinner passivation layers, which can be attributed to a significant change in the populations of electrons and holes near the silicon surface induced by the metal. Meanwhile thicker layers prevent the charge transfer between the silicon and metal more efficiently leading to insignificant changes in J0m. Based on these findings, we suggest a suitable metal work function range to optimize contact recombination in silicon-based solar cells.
关键词： passivating contacts,surface recombination,saturation current density,quasi-steady-state photoluminescence,work function,Effective lifetime,silicon solar cells
更新于2025-09-23 15:21:01
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Extraction of the minority carrier transport properties of solar cells using the Hovel model and genetic algorithms
摘要： In this paper, a quick and accurate method for extraction of the minority carrier transport properties of p-n or n-p junction solar cells, such as diffusion lengths and surface recombination velocities, is presented. The knowledge of these parameters is essential to investigate factors that limit the performance of photovoltaic devices. The proposed method, based on genetic algorithms and the analytical Hovel model, is used to fit the external quantum efficiency (EQE) curves of solar cells with different emitter thicknesses. As a demonstrative example of application of the procedure carried out in this work, theoretical and experimental EQE curves of n-p GaAs solar cells under the standard AM1.5G spectrum have been used in order to extract the desired parameters. Errors less than 2.4% have been obtained, which shows the ability of the developed tool. An analysis of the total number of iterations is presented. Results obtained can be used to improve the design, optimization and manufacturing process of high efficiency photovoltaic devices.
关键词： diffusion length,surface recombination velocity,Hovel model and genetic algorithms,solar cells
更新于2025-09-23 15:19:57
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Enhancement of the optical gain in GaAs nanocylinders for nanophotonic applications
摘要： Semiconductor nanolasers based on microdisks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last few decades for on-chip light source applications. However, practical realization of low threshold, room temperature semiconductor nanolasers is still a challenge due to the large surface-to-volume ratio of the nanostructures, which results in low optical gain and hence higher lasing threshold. Furthermore, the gain in nanostructures is an important parameter for designing all-dielectric metamaterial-based active applications. Here, we investigate the impact of p-type doping, compressive strain, and surface recombination on the gain spectrum and the spatial distribution of carriers in GaAs nanocylinders. Our analysis reveals that the lasing threshold can be lowered by choosing the right doping concentration in the active III–V material combined with compressive strain. This combination of strain and p-type doping shows 100× improvement in gain and approximately five times increase in modulation bandwidth for high-speed operation.
关键词： surface recombination,optical gain,compressive strain,GaAs nanocylinders,nanophotonic applications,p-type doping
更新于2025-09-23 15:19:57
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[IEEE 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Bengaluru, India (2018.12.17-2018.12.19)] 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Mapping of Bulk Diffusion Length and Effective Back Surface Recombination Velocity in Silicon Solar Cells
摘要： Mapping of diffusion length (L) in the bulk region and effective back surface recombination velocity (SRV) in Al-BSF and PERC Si solar cells has been carried out by utilizing the spectral response (SR) at desired wavelengths. Light beam induced current (LBIC) technique was used to generate the maps of SR and re?ectivity (R) on cell area (6”x6”). MATLAB tool was used to convert the spatial maps of SR and R into L and SRV. We found that (i) the distribution of L in multi-crystalline cells varied from grain to grain in wide range (150-600 μm) while in mono-crystalline cells, it varied in rather narrow range (450-600 μm) ; (ii) the values of SRV for PERC cells (120-250 cm/sec for mono-crystalline and 100-250 cm/sec for multi-crystalline) and Al-BSF cells (320-400 cm/sec for mono-crystalline and 250-350 cm/sec for multi-crystalline) differ by considerable magnitude due to passivation quality at back side. Three multi-crystalline Al-BSF Si solar cells of cell ef?ciencies 17.6%, 17.9% and 18.1% were investigated with the proposed methodology and demonstrated that the ef?ciency de?cit is primarily due to defects present in bulk material and poor back surface passivation.
关键词： Light beam induced current,Surface recombination velocity,Diffusion length,Si solar cells
更新于2025-09-23 15:19:57
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Reducing the surface recombination during light-driven water oxidation by core-shell BiVO4@Ni:FeOOH
摘要： The photocurrent of BiVO4 is limited by surface recombination not surface catalysis, which is currently reported as the main restrict factor for high efficiency photo-electrochemical (PEC) water splitting. To solve this problem, an ultrathin Ni:FeOOH (~ 8 nm) modified nanoporous BiVO4 photoanode (BiVO4@Ni:FeOOH) was constructed with core-shell structure for PEC water oxidation. Attributed to the p-n hetero-junction formed between BiVO4 and Ni:FeOOH, the photocurrent density of BiVO4@Ni:FeOOH increased by a factor of 11 (2.86 mA cm-2 at 1.23 V vs. RHE), together with ~ 180 mV negative shift of onset potential under AM 1.5 G irradiation (100 mW cm-2) in comparison to the pristine BiVO4. More importantly, detailed insight into the fate of the photo-generated charge carriers at the surface is investigated. Intensity modulated photocurrent spectroscopy (IMPS) is used to investigate the surface carrier dynamics of BiVO4 and BiVO4@Ni:FeOOH. IMPS results and hole scavenger measurement (HSM) certify the main role of Ni:FeOOH is to improve surface recombination by largely decreasing the surface recombination rate constant (krec), not surface catalysis. This work demonstrates Ni:FeOOH can facilitate local surface kinetics and reduce recombination rates as well and be used in other photoelectrodes especially the photoanodes with surface defects for PEC water splitting.
关键词： Core-shell,intensity modulated photocurrent spectroscopy,p-n heterojunction,surface recombination
更新于2025-09-19 17:15:36
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Charge Carrier Collection and Contact Selectivity in Solar Cells
摘要： The electronic properties of the contacts to a photovoltaic absorber material are important for the final efficiency of any type of solar cell. For highly efficient solar cells based on high quality absorber materials like single-crystalline silicon, polycrystalline Cu(In,Ga)Se2, CdTe, or metal-halide perovskites, contact formation is even the decisive processing step determining the final efficiency. The present paper combines recently developed quantitative concepts for the description of contacts to solar cells in terms of their selectivity toward a more general description that is valid for all types of solar cells and all types of contacts. It is shown that the built-in voltage is an important parameter to influence the selectivity of contacts to photovoltaic absorber materials. It is also shown that the contact selectivity is mathematically related to the collection efficiency which can be measured by luminescence based techniques.
关键词： solar cells,charge extraction,surface recombination,photovoltaics,interface recombination
更新于2025-09-19 17:13:59
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Impact of Proton and Electron Irradiation-Induced Defects on the Dark Current of GaAs Solar Cells
摘要： The same amount of non-ionizing energy is deposited in GaAs solar cells through 1 MeV proton and electron radiation at specific fluence values. The defects created are detected and characterized via temperature-dependent dark I–V analysis, and the energy levels are correlated to trap states observed via admittance spectroscopy. A remarkable difference is observed between the defect energy levels introduced in the proton and electron cases: in the former, the recombination centers lie around the mid-gap position, while in the latter they are spread over a wider energy range in the band-gap. This induces a profound difference in the degradation of the recombination current in the space-charge region. On the other hand, the degradation of the diffusion current in the neutral regions is found to be determined by the recombination velocities at the back and front hetero-interfaces of the solar cell. They depend only on the displacement damage dose and are independent of the particle type.
关键词： recombination current,semiconductor device modeling,surface recombination,Displacement damage,irradiation-induced defect,GaAs solar cell
更新于2025-09-12 10:27:22
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Universal explanation for degradation by charge accumulation in crystalline Si photovoltaic modules with application of high voltage
摘要： It was experimentally found that surface recombination due to charge accumulation, called polarization-type potential-induced degradation (PID), occurs by applying high voltage in n-type crystalline Si photovoltaic (PV) modules. By contrast, polarization-type PID has not been observed yet in p-type crystalline Si PV modules. We investigated the effect of differences in anti-reflection coating (ARC) and the conduction type of the substrate used as a base for PV cells on PID. PID was examined for PV modules using p-type and n-type crystalline Si PV cells with a SiNx or SiNx/SiO2 stacked ARC layer. The results indicate that PID owing to charge accumulation occurs even for p-type crystalline Si PV modules by applying high positive voltage. Furthermore, we found that polarization-type PID due to charge accumulation in ARC, leading to surface recombination, is due not to the conduction type of the substrate but to the ARC structure.
关键词： potential-induced degradation,anti-reflection coating,surface recombination,charge accumulation,photovoltaic modules
更新于2025-09-11 14:15:04