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Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET
摘要： This brief ?rst time presents single-event burnout (SEB) simulation results for conventional AlGaN/GaN gate ?eld plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET with electrode connected doped plugs in the buffer (EC-DP MISFET) is proposed for the ?rst time. The SEB triggering mechanisms contain the back-channel effect and following impact ionization dominated by electron in the high ?eld region. By comparing the simulation results from the GFP-C MISFET and proposed hardened EC-DP MISFET, the carriers induced by heavy ion can be quickly absorbed to drain and source electrode through EC-DP, so that the proposed EC-DP MISFET can achieve better SEB performance than conventional one. With a heavy ion having the linear energy transfer value of 0.6-pC/μm striking vertically, SEB threshold voltage obtained in GFP-C MISFET and hardened EC-DP MISFET is 280 and 338 V, respectively.
关键词： MISFET,single-event burnout (SEB) hardening,SEB,technology computer-aided design (TCAD),Electrode connected doped plugs (EC-DP)
更新于2025-09-23 15:23:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Plug-and-Play Generation and Manipulation of Squeezing on Chip
摘要： We propose a novel graphic method to enable the analysis of the field-effect transistor (FET) threshold voltage variation (cid:2)Vth due to random telegraph signals in a percolative channel. First, through technology computer-aided design simulation with no percolation, both a minimum (cid:2)Vth and a critical curve in a mloc ? σloc plot are produced. The former constitutes a statistical distribution far away from the conventional log-normal one. In the latter, mloc and σloc are the mean and the standard deviation, respectively, of a well-known normal variable in Mueller–Schulz’s percolation theory. The critical mloc ? σloc curve divides the plot into the allowed region and the forbidden region and will go down with increasing gate size. Then, (cid:2)Vth contours in the allowed region are graphically created. While applying to existing experimental (cid:2)Vth statistical distributions of SiON- and high-k metal gate (HKMG)-scaled FETs, resulting paired mloc and σloc at high (cid:2)Vth remain intact, regardless of gate size or gate stack type. This means that the underlying percolation patterns resemble each other, due to the same manufacturing process used. However, if these paired mloc and σloc fall in the forbidden region, it is the critical mloc ? σloc curve dominating. Application to bias and temperature instability statistical data in literature is straightforwardly well done.
关键词： percolation,technology computer-aided design (TCAD),Bias and temperature instability (BTI),trap,random telegraph signals (RTSs),field-effect transistors (FETs)
更新于2025-09-16 10:30:52