研究目的
To present simulation results for single-event burnout (SEB) in conventional AlGaN/GaN gate field plate MISFET and propose a hardened MISFET with electrode connected doped plugs to improve SEB performance.
研究成果
The hardened EC-DP MISFET achieves better SEB performance with a higher threshold voltage (338 V) compared to the conventional GFP-C MISFET (280 V), due to the rapid absorption of carriers through the electrode-connected doped plugs, suppressing burnout mechanisms.
研究不足
The simulation is 2-D, which may not fully capture 3-D effects; results are qualitative rather than quantitative, and performance comparisons should be considered relative.
1：Experimental Design and Method Selection:
2-D physics-based numerical simulations using TCAD Sentaurus software to model SEB effects in GaN-based MISFETs, with a focus on comparing conventional and hardened structures.
2：Sample Selection and Data Sources:
Simulation of GFP-C MISFET and EC-DP MISFET structures based on prior modeling work, with specific dimensions and trap densities defined.
3：List of Experimental Equipment and Materials:
TCAD Sentaurus software, heavy ion model with specified parameters (LET values, spatial and temporal Gaussian functions).
4：Experimental Procedures and Operational Workflow:
Heavy ion irradiation simulated perpendicularly at sensitive positions, with transient drain current monitored to detect SEB occurrence.
5：Data Analysis Methods:
Comparison of SEB threshold voltages and carrier density distributions between devices to analyze mechanisms and performance improvements.
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