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Investigation of KBiFe <sub/>2</sub> O <sub/>5</sub> as a Photovoltaic Absorber
摘要： KBiFe2O5 (KBFO) was grown by pulsed laser deposition (PLD) on SrTiO3 (001) (STO), 1 at% Nb-SrTiO3 (001) (Nb-STO) and MgAl2O4 (001) (MAO). In the case of MAO substrate, epitaxial growth is obtained. As its bandgap is relatively low (1.6 eV in the bulk), KBFO is a promising candidate for oxide photovoltaics. In this work we examine the growth of KBFO by PLD by looking at its structure and composition and we investigate the optical properties of the films obtained. A photovoltaic architecture based on KBFO films is proposed and a solar cell behaviour based on KBFO absorber is obtained.
关键词： pulsed laser deposition,solar cell,thin film,photovoltaics,oxide
更新于2025-09-23 15:19:57
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Effect of selenium partial pressure on the performance of Cu2ZnSn(S, Se)4 solar cells
摘要： Sputtering followed by selenization is one of the most common methods for preparing CZTSSe thin films. However, the influence of selenium partial pressure on the crystallinity of the CZTSSe film has been rarely reported. In this study, CZTSSe thin films were prepared by selenization using quartz tubes of different lengths. The influence of Se saturated vapor pressure and temperature on the structure, composition, optical, and electrical properties of CZTSSe films and solar cells was analyzed and these results were used to optimize the performance of the CZTSSe film. It was found that the maximum partial pressure of selenium was 22,542 Pa when the selenization process was carried out in a quartz tube with a length of 30 cm, which largely improved the structural and electrical properties of CZTSSe. However, quartz tube with an over-short length would bring strong partial pressure during selenization, which resulted in a generation of secondary phases. Finally, CZTSSe thin-film solar cell with a maximum efficiency of 3.27% was obtained at an optimal selenium partial pressure of 22542 Pa.
关键词： CZTSSe,thin-film solar cells,selenium partial pressure,selenization
更新于2025-09-23 15:19:57
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Selective area laser-assisted doping of SiC thin films and blue light electroluminescence
摘要： Laser-assisted doping combined with annealing technique is used in selective areas to form a p–n junction on a SiC thin film grown by the pulsed laser deposition on a Si substrate at a temperature of 800 °C. This approach in an aluminum chloride solution and a phosphoric solution has resulted in p-SiC/n-Si and n-SiC/p-Si hetero-structures, respectively. Further, a functional in-plane p–n junction is realized side-by-side on the post-deposited SiC thin film. I–V characteristics by two probe technique showed the p–n diode characteristics. Blue light (400 nm) electroluminescence from the p–n junction on SiC thin film was observed in the forward biased condition. Further, an improvement in the I–V reverse characteristics was observed by illuminating the p–n SiC thin film with green/blue light.
关键词： pulsed laser deposition,laser assisted doping,SiC thin film,electroluminescence,silicon carbide,selective area doping
更新于2025-09-23 15:19:57
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Transparent Electrode and Buffer Layer Combination for Reducing Carrier Recombination and Optical Loss Realizing over a 22%-Efficient Cd-Free Alkaline-Treated Cu(In,Ga)(S,Se) <sub/>2</sub> Solar Cell by the All-Dry Process
摘要： Structures of (K or Cs) alkaline-treated Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells are developed, and their carrier recombination rates are scrutinized. It is determined that short-circuit current density (JSC) is enhanced (decreased optical loss), when ZnS(O,OH), (Cd,Zn)S, and Zn0.8Mg0.2O buffers with large band-gap energy (Eg) are applied as replacement of CdS buffer. The JSC is further increased, more reducing the optical loss, when Zn0.9Mg0.1O:B is used as transparent conductive oxide (TCO) with larger Eg and lower free carrier absorption than those of ZnO:Al. Furthermore, all carrier recombination rates throughout the devices with K or Cs treatment, especially at buffer/absorber interface and in quasi neutral region, are reduced, thereby reducing open-circuit voltage deficit (VOC,def), well consistent with the simulated ones. The carrier recombination rate at the buffer/absorber interface is further decreased, when the CdS and (Cd,Zn)S buffers, deposited by chemical bath deposition, are applied, leading to the more reduction of the VOC,def and the high conversion efficiency (η) of about 21%. Under the trade-off between VOC,def and optical loss, the highest η of 22.6% is attained with the lowest power loss (or the highest VOC × JSC) in the Cs-treated Cd-free CIGSSe solar cell with an optimized structure of glass/Mo/CIGSSe/Zn0.8Mg0.2O/Zn0.9Mg0.1O:B, fabricated by all-dry process, where the Zn0.8Mg0.2O buffer is prepared by the sputtering method. This occurs because the JSC is the highest attributable to the larger Eg of Zn0.8Mg0.2O buffer than those of the CdS and (Cd,Zn)S.
关键词： Zn1-xMgxO,Zn1-xMgxO:Al,Cu(In,Ga)(S,Se)2 thin-film solar cell,carrier recombination rates,Zn1-xMgxO:B,(Cd,Zn)S
更新于2025-09-23 15:19:57
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Investigation of thin-film p-BaSi<sub>2</sub>/n-CdS heterostructure towards semiconducting silicide based high efficiency solar cell
摘要： In this article, semiconducting Barium Silicide (BaSi2) absorber based Al/SnO2:F/CdS/BaSi2:B/Cu novel heterostructure thin-film solar cell (TFSC) has been studied in details. The solar cell has been numerically simulated and intensely analyzed by Solar cell Capacitance Simulator (SCAPS). Layer thickness was varied from 100-3000 nm for p+-BaSi2 absorber, 20-200 nm for both n-CdS buffer, and n+-SnO2:F window layers to optimize the device. Hitherwards, the impurities concentration for acceptor (NA) and donor (ND) ions was optimized for each layer through ample variation. The influence of single-donor and acceptor type bulk defect densities has been investigated thoroughly in p+-BaSi2 and n-CdS materials, respectively. An efficiency >30% is achievable ideally with a 2 μm thick BaSi2 absorber without incorporating defects whereas it reduces to 26.32% with only 1.2 μm thick absorber including certain amount of defects. Cell thermal stability and alteration of cell parameters were studied under cell operating temperature from 273°K to 473°K. Finally, the effect of series (Rs) and shunt (Rsh) resistances on proposed cell has been investigated meticulously. This newly designed solar cell structure proclaims the chance of fabricating a resourceful, low cost, and highly efficient TFSC near future.
关键词： SnO2:F window,Thin-film solar cell,BaSi2 absorber,SCAPS simulation,CdS buffer,Optimization
更新于2025-09-23 15:19:57
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nano structured films induced by laser plasma ionization deposition
摘要： This research explores the optical properties of a large group of silicon/silica nanofibrous thin films. A picosecond pulse laser was employed for indirect deposition of ablated silicon on glass substrates. Prominent parameters such as laser power, repetition rate, pulse duration and scanning speed were changed to vary the structural and compositional properties of synthesized nanofibrous thin films. Transmission and specular reflection measurements along with material characterization techniques, Raman and FTIR, were employed for better interpretation of the results. By and large, an increase in the values for repetition rate and scanning speed produced a corresponding increase in optical data intensity, while an increase in power and pulse duration produced a drop in the same data. The results show that degree of oxidation and inherent porous structure are driving the light interaction in thin samples, as indicated by the changes in intensity or spectrum shape. Observation of these trends enabled us to apply tunable fabrication procedures to obtain desired groups of nanofibrous thin films. Electron and optical microscopy as well as background knowledge certify tangled nano-wired morphology in most cases. Structures with highly desirable usages, such as in sensing technology, can be optimized by their porosity, density and thickness.
关键词： Optical spectroscopy,Thin film,Pulse duration,Pulsed laser,Nano-fibers
更新于2025-09-23 15:19:57
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Thin-film micro-concentrator solar cells
摘要： Concentrator PV (CPV) employs optical elements to concentrate sunlight onto small solar cells, offering the possibility of replacing expensive solar cells by more economic optical elements, and higher device power conversion efficiencies. While CPV has mainly been explored for highly-efficient single crystalline and multi-junction solar cells, the combination of thin-film solar cells with the concentration approach opens up new horizons in CPV. Typical fabrication of thin-film solar cells can be modified for efficient, high-throughput, and parallel production of organized arrays of micro solar cells. Their combination with micro lens arrays promises to deliver micro-concentrator solar modules with a similar form factor as present day flat panel PV. Such thin-film micro-concentrator PV modules would use significantly less semiconductor solar cell material (reducing the use of critical raw materials) and lead to a higher energy production (by means of concentrated sunlight), with the potential to lead to a lower levelized cost of electricity. This review article gives an overview of the present state-of-the-art in the fabrication of thin-film micro solar cells based on Cu(In,Ga)Se2 absorber materials and introduces optical concentration systems that can be combined to build the future thin-film micro-concentrator PV technology.
关键词： Cu(In,Ga)Se2,concentrator photovoltaics,thin film solar cells,photovoltaics,micro-concentrator
更新于2025-09-23 15:19:57
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Dynamic Structural Color from Wrinkled Thin Films
摘要： Structural color caused by thin-film interference is widespread and simple in nature. Many researchers have already showed the reversible color change of structural color system, but it is difficult to regulate dynamically with tunable intensity and viewable angle. Herein, a dynamic structural color platform is reported by combining spontaneous thin film interference and wrinkling phenomenon in nature. This robust yet low cost strategy enables large-scale and spatially arbitrary preparation of a uniform structural color surface through the whole visible spectral range. Furthermore, the prepared isotropic and anisotropic structural colors on disordered and ordered wrinkled thin films (WTFs) exhibit different optical properties that can be precisely and reversibly regulated by ultraviolet (UV) light and near-infrared (NIR) light irradiation. This exquisite and tunable structural color platform may find applications in information storage, smart display, anticounterfeiting and encryption.
关键词： dynamic structural color,tunable viewable angle,thin film,reversible wrinkle
更新于2025-09-23 15:19:57
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Significant Performance Improvement of Oxide Thin-Film Transistors by a Self-Assembled Monolayer Treatment
摘要： Despite being a standard process in fabrication of organic thin-film transistors (TFTs) to reduce interface trap density and decrease surface energy, self-assembled monolayer (SAM) treatment of gate dielectrics is rarely used in oxide-semiconductor-based TFTs due to possible damage to the SAM during semiconductor deposition. Here, by studying the dependence of plasma damage to SAM on the deposition conditions of InGaZnO (IGZO) semiconductor thin films, the feasibility of enhancing the performance of oxide TFTs using octadecyl-trichlorosilane (OTS)-treated, ultra-thin AlxOy gate dielectrics is explored. It is discovered that under optimized conditions, the TFTs can be significantly improved, showing a reduction of interface trap density by 50% and an increase of carrier mobility and current on/off ratio by a factor of 2.3 and 76, respectively. The effects on bias stress stability also show substantial improvement after the SAM interface treatment. Finally, such an optimized condition is found to also work for IGZO TFTs gated with OTS-treated HfOx, showing an increase of mobility from 7.8 to 16 cm2 V?1 s?1 compared with the untreated devices. As a result, this simple and yet effective interface treatment method and the resulting devices may have potential applications in future low-cost, low-power electronics.
关键词： interface treatment,octadecyltrichlorosilane,self-assembled monolayers,thin-film transistors,oxide semiconductors
更新于2025-09-23 15:19:57
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A novel PEDOT:PSS/SWCNH bilayer thin film counter electrode for efficient dye-sensitized solar cells
摘要： Thin platinum deposited over fluorine-doped tin oxide glass substrate is a well-known and widely used counter electrode for efficient dye-sensitized solar cells. In this paper, we investigated a potential and Pt-free bilayer thin film counter electrode based on single wall carbon nanohorn over PEDOT:PSS film. The bilayer thin film counter electrode was developed using a simple spin coat process. The results of atomic force microscope and scanning electron microscope unveil the uniform distribution of single wall carbon nanohorns over PEDOT:PSS with average size of 76 nm. The extensive electrochemical analysis demonstrated superior electrocatalytic behavior for bilayer counter electrode with lower peak-to-peak separation potential of 0.6 V, lower Rs and RCT values of 25.9 Ω and 399 Ω, and higher Jo value of 2.4 mA cm?2. The fabricated DSSC using bilayer counter electrode witnessed higher power conversion efficiency of 5.1%, compared to PEDOT:PSS (3.87%) and SWCNH (1.88%), and is almost equivalent to the platinum-based counter electrode (5.53%). The present study of bilayer counter electrode has great potential in terms of low-cost and non-platinum counter electrode for dye-sensitized solar cell applications.
关键词： Counter electrode,PEDOT:PSS,Single wall carbon nanohorn,Bilayer thin film,Dye-sensitized solar cells
更新于2025-09-23 15:19:57