- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Recent progress on jet printing of oxide-based thin film transistors
摘要： Among the printing technologies for printed electronics, jet printing-based methods provide promising solutions to the fabrication of oxide-based thin film transistors (TFTs) for flexible and non-flexible electronics. Their direct patterning capability, non-vacuum and solution-based material formation process have attracted a significant amount of interests from both the academic and industry sectors. This topical review summarizes recent progress on the development of jet printed metal oxide TFTs with special attention given to the surface related effects, ink preparation and post-printing treatments, which are the critical aspects of obtaining high performance printed TFTs. Firstly, a brief introduction is made on the state of art jet printing technologies: the piezoelectric/thermal inkjet printing, the newly emerged electro-hydrodynamic jet printing and aerosol jet printing. Then, surface related issues of wettability and coffee-ring effect are discussed. At last, jet printing of oxide-based TFTs is reviewed according to the classification of printed material types: metal oxide semiconductors, gate dielectrics and conductive electrodes. The extensive review of low temperature annealing methods made this work particular interesting to the printing of oxide-based TFTs on flexible substrates.
关键词： gate dielectric,jet printing,oxide-based semiconductors,thin film transistors,electrode
更新于2025-09-23 15:22:29
-
X-ray Photoelectron Spectroscopy Analysis of the Effect of Photoresist Passivation on InGaZnO Thin-film Transistors
摘要： Bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs) with EOC photoresist (PR) passivation were fabricated. Compared to the unpassivated IGZO TFT with a mobility of 6.71 cm2V-1s-1, a hysteresis of 2.42 V and a poor bias stress stability, the PR-passivated IGZO TFT showed good electrical characteristics with a higher mobility of 8.85 cm2V-1s-1, a lower hysteresis of 0.06 V and a more reliable stability (△Vth = 0.36 V) under positive gate bias stress (PBS). The effect of PR passivation on the performance of IGZO-TFT was investigated by x-ray photoelectron spectroscopy (XPS), systemically. The result of XPS spectra of the O 1s core levels indicate that PR passivation effectively suppressed the adsorption/desorption effect on IGZO surface, resulting in fewer unstable states and higher electrical stability. Furthermore, XPS depth profile experiments show that the proportion of elements on the film surface changed and the IGZO surface was In-rich after PR passivation, enhancing the mobility. The PR passivation with low temperature (100 oC) process exhibited good dielectric quality and excellent barrier ability against water and oxygen molecules. Therefore, it may be a good candidate for high-mobility and high-stability flexible TFTs in future.
关键词： XPS,InGaZnO,Photoresist,Thin film transistors,Adsorption/desorption
更新于2025-09-23 15:21:21
-
<i>(Invited)</i> Fabrication Technique for Low-Temperature Aqueous Solution-Processed Oxide Thin-Film Transistors
摘要： Solution-processing of oxide semiconductor is a promising technique for the simple and low-cost fabrication of oxide thin-film transistors (TFTs). We demonstrate improved TFT characteristics by application of a hydrogen injection and oxidation (HIO) process to the fabrication of high-performance low-temperature oxide TFTs. The compatibility of this technique for flexible substrates was also confirmed when the HIO method was applied to solution-processed metal oxide TFTs.
关键词： solution-processing,flexible substrates,low-temperature fabrication,oxide thin-film transistors,hydrogen injection and oxidation
更新于2025-09-23 15:21:21
-
Transparent Electronics Using One Binary Oxide for All Transistor Layers
摘要： A novel process is developed in which thin film transistors (TFTs) comprising one binary oxide for all transistor layers (gate, source/drain, semiconductor channel, and dielectric) are fabricated in a single deposition system at low temperature. By simply changing the flow ratio of two chemical precursors, C8H24HfN4 and (C2H5)2 Zn, in an atomic layer deposition system, the electronic properties of the binary oxide (HfxZn1?xO2?δ or HZO) are tuned from conducting, to semiconducting, to insulating. Furthermore, by carefully optimizing the properties of the various transistor HZO layers, all-HZO thin film transistors are achieved with excellent performance on both glass and plastic substrates. Specifically, the optimized all-HZO TFTs show a saturation mobility of ≈17.9 cm2 V?1 s?1, low subthreshold swing of ≈480 mV dec?1, high Ion/Ioff ratio of >109, and excellent gate bias stability at elevated temperatures. In addition, all-HZO inverters with high DC voltage gain (≈470), and all-HZO ring oscillators with low stage delay (≈408 ns) and high oscillation frequency of 245 kHz are demonstrated. This approach presents a novel, simple, high performance, and cost-effective process for the fabrication of indium-free transparent electronics.
关键词： transparent multilayer semiconducting channel,transparent electronics,transparent oxide contacts,thin film,transistors,transparent dielectric oxides
更新于2025-09-23 15:21:21
-
Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location
摘要： We have investigated the displacement damage (DD) effect on the electrical characteristics of ZnO thin film transistors (TFTs) based on its location of origin in the device structure. The area subjected to the maximum proton dose induces a maximum DD effect in that particular location. ZnO TFTs with two different passivation layer thicknesses were prepared to obtain maximum proton dose distribution in either the ZnO channel layer or ZnO/SiO2 interface. The devices were irradiated by a proton beam with an energy 200 keV and 1 × 1014 protons/cm2 fluence. Transport of Ions in Matter (TRIM) simulation, followed by calculation of depth distribution of the nonionizing energy loss (NIEL), illustrated different proton dose distribution profiles and NIEL profiles along the depth of the device for these two types of samples. The sample with the maximum proton dose peaks at the ZnO/SiO2 interface exhibited a significant degradation in device electrical characteristics as compared to the negligible degradation of the sample when the maximum proton dose was absorbed in the ZnO layer. Therefore, the investigation into the radiation hardness of proton-irradiated ZnO TFTs is non-trivial since the displacement damage induces drastic changes on the device characteristics based on the damage location.
关键词： ZnO,NIEL,Displacement damage,Thin-film transistors,Proton radiation effects
更新于2025-09-23 15:21:01
-
Significant Performance Improvement of Oxide Thin-Film Transistors by a Self-Assembled Monolayer Treatment
摘要： Despite being a standard process in fabrication of organic thin-film transistors (TFTs) to reduce interface trap density and decrease surface energy, self-assembled monolayer (SAM) treatment of gate dielectrics is rarely used in oxide-semiconductor-based TFTs due to possible damage to the SAM during semiconductor deposition. Here, by studying the dependence of plasma damage to SAM on the deposition conditions of InGaZnO (IGZO) semiconductor thin films, the feasibility of enhancing the performance of oxide TFTs using octadecyl-trichlorosilane (OTS)-treated, ultra-thin AlxOy gate dielectrics is explored. It is discovered that under optimized conditions, the TFTs can be significantly improved, showing a reduction of interface trap density by 50% and an increase of carrier mobility and current on/off ratio by a factor of 2.3 and 76, respectively. The effects on bias stress stability also show substantial improvement after the SAM interface treatment. Finally, such an optimized condition is found to also work for IGZO TFTs gated with OTS-treated HfOx, showing an increase of mobility from 7.8 to 16 cm2 V?1 s?1 compared with the untreated devices. As a result, this simple and yet effective interface treatment method and the resulting devices may have potential applications in future low-cost, low-power electronics.
关键词： interface treatment,octadecyltrichlorosilane,self-assembled monolayers,thin-film transistors,oxide semiconductors
更新于2025-09-23 15:19:57
-
Interfacial Band Engineering of MoS <sub/>2</sub> /Gold Interfaces Using Pyrimidine-Containing Self-Assembled Monolayers: Toward Contact-Resistance-Free Bottom-Contacts
摘要： Bottom-contact architectures with common electrode materials such as gold are crucial for the integration of 2D semiconductors into existing device concepts. The high contact resistance to gold—especially for bottom contacts—is, however, a general problem in 2D semiconductor thin-film transistors. Pyrimidine-containing self-assembled monolayers on gold electrodes are investigated for tuning the electrode work functions in order to minimize that contact resistance. Their frequently ignored asymmetric and bias-dependent nature is recorded by Kelvin probe force microscopy through a direct mapping of the potential drop across the channel during device operation. A reduction of the contact resistances exceeding two orders of magnitude is achieved via a suitable self-assembled monolayer, which vastly improves the overall device performance.
关键词： work-function engineering,MoS2,thin-film transistors,self-assembled monolayers,Schottky barrier
更新于2025-09-23 15:19:57
-
[IEEE 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - Atlanta, GA, USA (2019.7.7-2019.7.12)] 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - A Unit-Cell Discontinuous Galerkin Scheme for Analyzing Plasmonic Photomixers
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： zinc oxide,dc switch,Cutoff frequency,pulse measurements,gate charge,monolithic ICs,RF switch,ionic semiconductors,thin-film transistors (TFTs)
更新于2025-09-23 15:19:57
-
Narrow bandgap difluorobenzochalcogenadiazole-based polymers for high-performance organic thin-film transistors and polymer solar cells
摘要： A bithiophene donor unit, 3-alkoxy-3’-alkyl-bithiophene (TRTOR), was copolymerized with difluorobenzochalcogenadiazole (ffBZ) containing different heteroatoms on their diazole structure to afford a series of PffBZ copolymers (where Z = X, T, Se) with narrow optical bandgaps in the range of 1.34-1.47 eV. The effects of ffBZ heteroatoms (O, S, and Se) on the optical properties, electrochemical characteristics and film morphologies of polymers as well as device performance were fully investigated. The results revealed that the highest occupied molecular orbitals (HOMOs) of polymers are gradually elevated accompanied by increased material solubility in common organic solvents as the size of heteroatoms increases. The PffBZ copolymers exhibit substantial hole mobility of 0.08-1.6 cm2 V-1 s-1 in organic thin-film transistors (OTFTs). The PffBX, PffBT, and PffBSe-based polymers exhibit maximum power conversion efficiencies (PCEs) of 5.47%, 10.12%, and 3.65%, respectively in polymer solar cells (PSCs). For PffBZ copolymers, the alkyl chain exerts a great influence on the morphology of the polymer:PC71BM blend films and hence affect PCEs in PSCs. It was found that the performing of polymers branching on the 2nd position for alkyl chain and the 3rd position for alkoxy chain were the best among PffBT and PffBSe-based polymers, and it is different from the tetrathiophene-based benchmark polymer branching on the 2nd position of the alkyl chain. X-ray diffraction revealed that all PffBZ-based polymers has obvious a face-on dominated orientation, and that chalcogen atom and branched position on alkoxy chain have a great influence on the morphologies of neat and blend films. The above results indicated that the branching positions and chalcogen atoms should be carefully optimized to maximize performance.
关键词： polymer solar cells,high-performance,difluorobenzochalcogenadiazole,organic thin-film transistors,narrow bandgap
更新于2025-09-23 15:19:57
-
Controlling In‐Ga‐Zn‐O Thin‐Film Resistance by Vacuum Rapid Thermal Annealing and Application to Transparent Electrode
摘要： This study reveals that an amorphous indium gallium zinc oxide film shows a large resistance change under vacuum rapid thermal annealing, whereas a zinc tin oxide film shows little resistance change under the same treatment. Based on these findings, the applicability of amorphous indium gallium zinc oxide thin films to a transparent source/drain electrode in zinc tin oxide thin-film transistors is investigated. The optical transmittance of the amorphous indium gallium zinc oxide and amorphous zinc tin oxide films in the visible region is greater than 85%. Furthermore, a zinc tin oxide thin-film transistor with an amorphous indium gallium zinc oxide source/drain electrode exhibits superior operation characteristics than devices with indium tin oxide source/drain electrodes, such as a lower threshold swing (from 369.96 to 315.45 mV dec?1), higher mobility (from 28.47 to 36.187 cm2 V?1 s?1), and higher on/off current ratio (from 1.25 × 107 to 3.56 × 107). In addition, in positive and negative bias temperature stress tests, the zinc tin oxide thin-film transistor with an amorphous indium gallium zinc oxide source/drain electrode shows almost equal stability compared to the zinc tin oxide thin-film transistor with an indium tin oxide source/drain electrode.
关键词： Zn-Sn-O (ZTO),In-Ga-Zn-O (IGZO) S/D electrode,thin-film transistors (TFT),vacuum rapid thermal annealing
更新于2025-09-23 15:19:57