研究目的
To demonstrate a low-temperature solution-processed oxide thin-film transistor (TFT) fabrication technique using a hydrogen injection and oxidation (HIO) process for improved TFT characteristics and compatibility with flexible substrates.
研究成果
The HIO method significantly improves the performance of low-temperature solution-processed oxide TFTs, achieving reasonable mobility and small hysteresis. The method is also compatible with flexible substrates, offering a simple and low-cost fabrication technique.
研究不足
The study focuses on IGZO-based TFTs and may require further validation for other oxide semiconductors. The process temperatures, while lower than conventional methods, may still need optimization for certain flexible substrates.
1：Experimental Design and Method Selection:
The study employed a hydrogen injection and oxidation (HIO) process to improve the characteristics of solution-processed oxide TFTs. The process involved hydrogen plasma treatment for hydrogen injection followed by thermal annealing for oxidation.
2：Sample Selection and Data Sources:
IGZO precursor solution was spin-coated on thermally oxidized SiO2/n+-Si substrates. The substrates served as the gate electrode.
3：List of Experimental Equipment and Materials:
Spin-coater for film deposition, hydrogen plasma treatment system, thermal annealing setup, photolithography equipment for patterning, DC sputtering for electrode formation.
4：Experimental Procedures and Operational Workflow:
The IGZO precursor solution was spin-coated, pre-annealed, and post-annealed. The HIO process was applied, followed by patterning of the active area and formation of source/drain electrodes.
5：Data Analysis Methods:
The transfer characteristics of the TFTs were assessed to evaluate performance improvements.
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