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One-step Co-evaporation of All-Inorganic Perovskite Thin Films with Room Temperature Ultralow Amplified Spontaneous Emission Threshold and Air-stability
摘要： Inorganic cesium lead halide perovskite has been successfully applied in optoelectronic field due to its remarkable optical gain properties. Unfortunately, conventional solution-processed CsPbX3 films suffer unavoidable pinhole defects and poor surface morphology, severely limiting their performance on amplified spontaneous emission (ASE) and lasing application. Herein, a dual-source thermal evaporation approach is explored in our work to achieve a uniform and high-coverage CsPbX3 polycrystalline thin film. It is found that the one-step co-evaporated CsPbBr3 (OC-CsPbBr3) thin films without post-annealing exhibit an ultralow ASE threshold of ~ 3.3 μJ/cm2 and gain coefficient above 300 cm-1. The coexistence of cubic and orthorhombic phases in this materials naturally form an energy cascade for the exciton transfer process, which enables rapid accumulation of excitons. Stable ASE intensity without degradation for at least 7 hours is also realized from OC-CsPbBr3 thin films under continuous excitation, which is superior to that in the solution-processed CsPbBr3 thin film. Notably, a Fabry-Perot (F-P) cavity laser based on the OC-CsPbBr3 thin film is first achieved, featuring an ultralow lasing threshold (1.7 μJ/cm2) and directional output (beam divergence of ~ 3.8°). This work highlights the noteworthy optical properties of OC-CsPbBr3 thin films, leading to potential available applications in the integrated optoelectronic chips.
关键词： amplified spontaneous emission,Cesium lead halide perovskite,vapor deposition,long-term stability,thin films
更新于2025-09-23 15:21:01
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Pure Anatase Phase Titanium Dioxide Films Prepared by Mist Chemical Vapor Deposition
摘要： In this research, pure anatase phase titanium dioxide thin films were successfully fabricated for the first time using the mist chemical vapor deposition method, and optional values for deposition temperature and concentration of titanium tetraisopropoxide were established. It was found that the crystallinity of the titanium dioxide film was significantly improved by increasing the deposition temperature. The best crystallinity of titanium dioxide film was obtained at 400 ?C. It was confirmed that pure anatase phase titanium dioxide films could be obtained using different concentrations of titanium tetraisopropoxide. The lower concentration of titanium tetraisopropoxide produced better crystallinity in the resultant titanium dioxide film. The morphologies of the titanium dioxide thin films were also significantly influenced by the concentration of titanium tetraisopropoxide in the precursor solution.
关键词： titanium dioxide,anatase,thin films,mist chemical vapor deposition,growth control
更新于2025-09-23 15:21:01
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A Bean-Like Formation of Germanium Nanoparticles Inside CNTs by the Subsequent Operation of Colloidal Synthesis and Catalytic Chemical Vapor Deposition Methods
摘要： The first attempts of implanting Ge nanoparticles (Ge NPs) inside iron filled CNTs (IF-CNTs) by a subsequent use of the bench top colloidal synthesis and chemical vapor deposition (CVD) approach is shown. Ge NPs are colloidally synthesized (with a 3.8 ± 0.6 nm in size) before the deposition. The hybrid Ge NPs/IF-CNTs structure and morphology are characterized using high-resolution transmission electron microscopy, scanning electron microscopy, selective area electron diffraction, and X-ray diffraction studies. After the deposition, Ge NPs appear to be grown in size and to be sprinkled almost homogeneously into the IF-CNTs similar to a bean-like deposition. CNTs diameter is also identified to be enlarged drastically when using Ge NPs as a catalyst in CVD compared to the CNTs formation without Ge NPs. In addition, micro-length rectangular Ge μPs are also found outside the nanotube core. Rietveld analysis shows the presence of γ-Fe (Fm-3m), ferromagnetic α-Fe (Im-3m), Fe3C, Ge (Fd-3m), and multiwall CNTs. The results indicate that Ge NPs and IF-CNTs demonstrate cocatalytic activity in increasing the respective sizes, which are dramatically larger than those obtained by the conventional approaches.
关键词： ferromagnetism,germanium,nanoparticles,colloidal,chemical vapor deposition,CNTs
更新于2025-09-23 15:21:01
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Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
摘要： Controlled growth of InGaN quantum dots (QDs) using photoelectrochemically (PEC) etched InGaN QD templates is demonstrated. The InGaN QDs are grown by a self-assembly (SA) method using metal-organic chemical vapor deposition on templates consisting of planar GaN and PEC etched InGaN QDs for comparison. The InGaN QD templates are formed using quantum-size-controlled PEC etching of planar InGaN layers on GaN, which produces controlled QD radiuses with a statistical mean (μ) of 17.3 nm and standard deviation (σ) of 6.2 nm, and densities of 1.2 × 1010 cm?2. The PEC etched QDs are capped with an AlGaN interlayer and GaN barrier layer to recover a planar surface morphology for subsequent SA growth of QDs. The PEC QD templates behave as seeds via localize strain near the PEC QDs which provide improved control of the SA QD growth. The SA grown QDs on PEC QD templates are smaller and have controlled radiuses with μ = 21.7 nm and σ = 11.7 nm compared to the SA QDs on planar GaN templates with radiuses of μ = 37.8 nm and σ = 17.8 nm. Additionally, the dot densities of the SA QDs on PEC QD templates are ~3 times higher and more closely match the underlying densities of the template (8.1 × 109 cm?2). Multiple quantum dots (MQDs) are also grown on both templates that consist of 4 periods of SA QDs and AlGaN/GaN interlayer/barrier layers. The MQDs grown on PEC QD templates better retain their planarized smooth surfaces after barrier layer growth, and exhibit ~3 times stronger PL intensity at room temperature compared to MQDs grown on planar GaN.
关键词： Metalorganic chemical vapor deposition,Nitrides,Quantum dots,Light emitting diodes,Atomic force microscopy,Photoelectrochemical etching
更新于2025-09-23 15:21:01
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Epitaxial Growth of Monolayer MoS <sub/>2</sub> on SrTiO <sub/>3</sub> Single Crystal Substrates for Applications in Nanoelectronics
摘要： Monolayer molybdenum disulfide (MoS2) crystals grown on amorphous substrates such as SiO2 are randomly oriented. However, when MoS2 is grown on crystalline substrates, the crystal shapes and orientations are also influenced by their epitaxial interaction with the substrate. In this paper we present the results from chemical vapor deposition growth of MoS2 on three different terminations of single crystal strontium titanate (SrTiO3) substrates. On SrTiO3(111) the monolayer MoS2 crystals form equilateral triangles with two main orientations, in which they align their <21?1?0>-type directions (i.e., the sulfur-terminated edge directions) with the <11?0>-type directions on SrTiO3. This arrangement allows near perfect coincidence epitaxy between seven MoS2 unit cells and four SrTiO3 unit cells. On SrTiO3(110) the MoS2 crystals tend to align their edges with both <11?0> and <11?2?> directions on SrTiO3 as these both provide favorable coincidence lattice registry. This distorts the crystal shapes and introduces an additional strain detectable by photoluminescence. When triangular MoS2 crystals are grown on SrTiO3(001), they again show a preference to align their edges with the <11?0> directions on SrTiO3. Our observations can be explained if the interfacial van der Waals (vdW) bonding between MoS2 monolayers and SrTiO3 is greatest when the maximum commensuration between the lattices is achieved. Therefore, a key finding of this paper is that the vdW interaction between MoS2 and SrTiO3 substrates determines the supported crystal shapes and orientations by the epitaxial relations. Controlled crystal orientations make the growth of large sheets of MoS2 possible when there are multiple nucleation sites. This minimizes the number of grain boundaries and optimizes electronic properties of the material, e.g., charge mobility, which is crucial for the application of monolayer MoS2 in next-generation nanoelectronic devices.
关键词： Raman spectroscopy,van der Waals epitaxy,scanning tunneling microscopy,SrTiO3,2D materials,chemical vapor deposition,MoS2,photoluminescence spectroscopy
更新于2025-09-23 15:21:01
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Low-temperature growth of n<sup>++</sup>-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes
摘要： We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n++-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (< 800 °C) was used to hinder Mg-passivation by hydrogen in the p++-GaN top surface. This allows achieving low-resistivity TJs without the need for post-growth Mg activation. TJs are further improved by inserting a 5 nm thick In0.15Ga0.85N interlayer (IL) within the GaN TJ thanks to piezoelectric polarization induced band bending. Eventually, the impact of InGaN IL on the internal quantum efficiency of blue LEDs is discussed.
关键词： metalorganic chemical vapor deposition,GaN tunnel junctions,blue light-emitting diodes
更新于2025-09-23 15:21:01
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Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources
摘要： The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were grown using toxic precursor gases. Here we demonstrate the creation of Ge films on Si substrates through physical vapor deposition of toxin-free solid Ge sources. Structural characterization indicates that a high tensile strain is introduced in the Ge film during the deposition process. We attribute the presence of such a tensile strain to the difference in thermal expansion coefficient between Si and Ge. A Ge peak, centered at ~2100 nm, is evident in the photoluminescence spectra of these materials, which might result from direct band gap photoluminescence alone, or from superposition of direct band gap and indirect band gap photoluminescence. These Ge-on-Si materials are therefore promising in light emission applications.
关键词： tensile strain,Si substrates,physical vapor deposition,Ge films,photoluminescence
更新于2025-09-23 15:21:01
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Near-ultraviolet Raman and micro-Raman analysis of electronic materials
摘要： Raman and micro-Raman analysis methods have been extensively investigated for the study of materials used in electronic and photonic devices. Raman studies are used to understand fundamental phonon properties, along with effects related to the crystal structure, disorder, doping, and external factors such as temperature and stress. Micro-Raman extends these investigations to the micron scale. This article reviews diverse benefits of Raman measurements when carried out using laser excitation in the near-ultraviolet wavelength range, nominally 400 to 325 nm. Micro-Raman methods in the near ultraviolet exploit the key advantage of reduced focal spot size, achievable at shorter wavelengths when using diffraction-limited optics, for mapping with high spatial resolution. There are distinct advantages common to Raman and micro-Raman spectroscopy in the near ultraviolet when compared to the widely used visible excitation. One advantage exploits the shallower optical penetration depth in select materials for probing near-surface regions or interfaces. A second advantage is related to tuning of the excitation photon energy relative to the electronic levels of a material for investigating resonance effects. Finally, the application of Raman scattering to materials which exhibit strong fluorescence requires tuning to a wavelength range away from the potentially obscuring emission. This article overviews several examples of these key advantages to study diverse applied physics problems in electronic and photonic materials. Topics covered include stress mapping in silicon and related materials, stress and thermal effects in gallium nitride and other group-III-nitride semiconductors, and carbon materials ranging from graphite and graphene to diamond grown using chemical vapor deposition. The fundamental effects of stress- and temperature-induced shifts in phonon energies and their application to study epitaxy and device-related effects are also briefly reviewed.
关键词： near-ultraviolet,stress mapping,carbon materials,chemical vapor deposition,phonon properties,Raman spectroscopy,electronic materials,micro-Raman,gallium nitride
更新于2025-09-23 15:21:01
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Selective growth of monolayer semiconductors for diverse synaptic junctions
摘要： The information computation through synapse networks in the brain plays a vital role for cognitive behaviors such as image/video recognition, self-learning, and decision-making. Achieving proper synaptic networks by conventional semiconductor and memristive devices has encountered critical issues such as the spatial density requiring a number of transistors for one synapse, reliable filament formation in memristors, or emulating diverse excitatory and inhibitory synaptic plasticity with two-terminal device geometry. Here, we report selective growth of variously doped MoS2 with controllable conductance plasticity, which can be used for emulating diverse synaptic junctions. The conductance plasticity in the monolayer MoS2 was found to originate from resistive-heating near the junctions with electrodes in the two-terminal device geometry and the carrier-concentration-dependent metal-insulator transition in the MoS2 channel. A spatiotemporal synaptic summation is demonstrated where the firing of a proper postsynaptic membrane potential can be designed for cognitive processes. Compared with previously reported three terminal synaptic devices with atomically thin materials, our two-terminal devices with flexible synaptic strengths have advantages for integrating three-dimensional neuronal networks. This provides a new insight on two-dimensional materials as a promising arena for integrated synaptic functionalities in artificial neural networks.
关键词： chemical vapor deposition,metal-insulator transition,defects engineering,two dimensional materials,synaptic junction
更新于2025-09-23 15:21:01
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Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition
摘要： Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown ?-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the ?-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.
关键词： Gallium oxide,Surface morphology,Crystallinity,Precursor concentration,Mist chemical vapor deposition,Epitaxial growth,Wide bandgap semiconductors
更新于2025-09-23 15:21:01