研究目的
Investigating the method to reduce the decay time in AlGaN/GaN photodetectors by pulsed heating mode.
研究成果
The pulsed heating method effectively reduces the decay time of AlGaN/GaN heterostructure photodetectors, offering a significant improvement over DC heating. This advancement is crucial for developing high accuracy and fast response/recovery UV detectors.
研究不足
The study is limited to AlGaN/GaN heterostructure photodetectors and may not be directly applicable to other materials or structures. The effectiveness of pulsed heating is evaluated under specific conditions and may vary with different parameters.
1：Experimental Design and Method Selection:
The study involves the fabrication and characterization of a suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater under ultraviolet illumination. The method employs pulsed heating to accelerate the course of persistent photoconductivity (PPC).
2：Sample Selection and Data Sources:
The samples used are AlGaN/GaN heterostructure photodetectors fabricated on silicon <111> wafers. Data is collected under various heating conditions.
3：List of Experimental Equipment and Materials:
Equipment includes a Keithley 2400 for transient response measurement, an infrared camera (FLIR T620) for temperature measurement, and various fabrication tools for device preparation.
4：Experimental Procedures and Operational Workflow:
The photodetectors are characterized under UV illumination with varying heating modes (DC and pulsed) to measure the decay time of photocurrent.
5：Data Analysis Methods:
The decay time is analyzed under different heating conditions to evaluate the effectiveness of pulsed heating in reducing PPC.
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