研究目的
Demonstrating a full color active matrix micro-LEDs (AMLEDs) display with high transparency over 40% based on top gate IGZO TFT (Thin film transistor) backplane.
研究成果
The study successfully demonstrated a full color micro display with flip chip RGB micro-LEDs array, achieving high transparency over 40% and more than 108% NTSC gamut, with brightness exceeding 400nits. This represents a significant advancement in micro-LED display technology.
研究不足
The study does not explicitly mention limitations, but potential areas for optimization could include further increasing the transparency and brightness of the display, as well as expanding the color gamut coverage.
1：Experimental Design and Method Selection:
The study involved the development of a full color active matrix micro-LEDs display using a top gate IGZO TFT backplane. The methodology included the fabrication of RGB micro-LEDs arrays and their integration with the IGZO TFT backplane.
2：Sample Selection and Data Sources:
RGB micro-LEDs of 324μm × 324 μm pixel size were used, arranged in 232 ×RGB×116 arrays with an active area of 3.3 inch on IGZO TFT backplane.
3：3 inch on IGZO TFT backplane.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The experiment utilized top gate IGZO TFT arrays fabricated on glass substrate, RGB micro-LEDs chips, low temperature solder material for bonding, and encapsulation materials.
4：Experimental Procedures and Operational Workflow:
The fabrication process included developing and fabricating top gate IGZO TFT arrays on glass substrate, bonding RGB micro-LEDs chips on the IGZO backplane using low temperature solder material, and encapsulating the transparent 3.3 inch AM micro LED panel.
5：3 inch AM micro LED panel.
Data Analysis Methods:
5. Data Analysis Methods: The performance of the display was evaluated based on its transparency, color gamut (NTSC, DCI P3, Rec. 2020), and brightness.
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