摘要： Thulium-doped glass has recently been highlighted as a potential candidate for amplifiers in a new telecommunications window, due to its potential for strong gain across a broad bandwidth in the 2-micron regime. However, the use of such technology in a silicon or planar platform has received much less attention. Lack of on-chip lasers is an obstacle to progress in silicon photonics with much research focused on mounting processed III-V lasers, bonding gain material, or the deposition of gain material onto SOI wafers. Here we report the preparation and study of Tm-doped aluminosilicate glass, which has been demonstrated as an efficient laser/amplifier in fibre-technology covering a 1.7-2.1 μm window. To achieve efficient operation the Tm3+ doping concentration is typically optimised for enhancing cross relaxation energy exchange between the 3H4 and 3F4 energy levels allowing an efficient “two-for-one” pumping approach. Fluorescent emission and gain can then be achieved by pumping with readily available ~795 nm sources diode-lasers. As such we have started preliminary investigations of higher concentrations to attempt to obtain enhanced gain per unit length devices.