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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Photonic Chip-Based Soliton Microcomb Driven by a Compact Ultra-Low-Noise Laser

DOI:10.1109/cleoe-eqec.2019.8873155 出版年份:2019 更新时间:2025-09-11 14:15:04
摘要: Photonics chip-based soliton microcombs have been used in many applications including LIDAR, spectroscopy, coherent communication and astronomical spectrometer calibration [1]. Current-initiated soliton microcombs have been demonstrated [2, 3] recently, signifying improvements in the fabrication of high-Q Si3N4 microresonators. However, both approaches suffer from limited input laser power, thus only demonstrated single-soliton at repetition rates above 149 GHz, which are challenging to detect with commercially available photodetectors. Here we demonstrate a single-soliton generation in 100-GHz-FSR Si3N4 microresonators fabricated using the photonic Damascene reflow process [4], yielding the intrinsic Q-factor exceeding 15 million [5]. Using a compact hybrid laser with narrow linewidth, low relative intensity noise (–160 dBc/Hz at foffset=100 kHz) and high output power up to 100 mW [6], different comb states are observed by simply changing the current of the laser diode, without the need of complex tuning mechanism such as a single sideband modulator [7]. As the laser noise is directly transferred to the soliton comb line, this low-noise laser can be utilized in applications where the phase noise is a critical parameter, e.g. low-noise microwave generation or coherent communication. The experimental setup shown in Fig. 1 (a) consists of an ULN laser operated by a current source and temperature controllers to tune its frequency and power. After the light is coupled into the Si3N4 photonic chip via double inverse nano tapers [8], the temperature of FBG/GC is changed to align the laser wavelength to the resonance of the microresonator. The laser diode current is increased (≈ 330 mA) until soliton existence range is sufficiently long. This is indicated by transmission signal directly observed after the chip on the photodetector (Fig. 1 c). Due to high-Q factor of the Si3N4, the soliton state can be accessed via simply frequency forward tuning [9], without the need of any complex soliton tuning mechanism. Further, different comb states are observed, i.e. modulation instability, multi-soliton state and single-soliton state, via laser diode current tuning. The coherence properties of the soliton-comb teeth is asserted by performing a heterodyne beatnote measurement using a reference laser with a short-time linewidth of 10 kHz (Fig. 1b). The soliton spectrum is fitted with a sech2 function corresponding to a 3 dB bandwidth of ≈19.3 nm and a ≈131.5 fs pulse.
作者: Arslan S. Raja,Junqiu Liu,Nicolas Volet,Rui Ning Wang,Jijun He,Erwan Lucas,Romain Bouchand,Paul Morton,John Bowers,Tobias J. Kippenberg
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Demonstrating a single-soliton generation in 100-GHz-FSR Si3N4 microresonators using a compact hybrid laser with narrow linewidth, low relative intensity noise, and high output power, without the need for complex tuning mechanisms.

The study successfully demonstrates single-soliton generation in high-Q Si3N4 microresonators using a compact, low-noise hybrid laser, enabling applications where phase noise is critical. The method simplifies the generation of soliton microcombs by eliminating the need for complex tuning mechanisms.

The study is limited by the need for high-Q Si3N4 microresonators and the specific conditions required for soliton generation, such as precise temperature and current control.

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