研究目的
Investigating the effects of double-pulse femtosecond laser on the nanofabrication of silicon, focusing on controlling the initial free electron state to improve surface morphology quality and achieving nanoholes below 200 nm.
研究成果
Double-pulse femtosecond laser can precisely control the properties of free electrons by adjusting the pulse delay, leading to improved processing accuracy and the ability to achieve nanoholes below 200 nm on silicon, which cannot be obtained with single pulse laser.
研究不足
The study is limited to the effects of double-pulse femtosecond laser on silicon and does not explore other materials or laser parameters extensively. The minimum achievable size is constrained by the laser fluence and focusing capabilities.
1：Experimental Design and Method Selection:
The experiment utilized a temporal shaping femtosecond laser by dividing a single pulse into two identical sub-pulses to control the initial free electron state.
2：Sample Selection and Data Sources:
Crystal <111> silicon was used as the substrate.
3：List of Experimental Equipment and Materials:
A commercial Spectra Physics Spitfire laser with a central wavelength of 800 nm and a pulse delay of 35 fs, a 10X and a 50X objective lens for focusing, and cold field scanning electron microscopy (SEM) for observation.
4：Experimental Procedures and Operational Workflow:
A single shot pulse was used to ablate holes on silicon, with the pulse delay varied from 0 fs to 2000 fs. The laser was focused onto the silicon substrate, and the results were observed using SEM.
5：Data Analysis Methods:
The relationship between pulse delay and ablation threshold was simulated using the plasma model to explain the observed phenomena.
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