研究目的
Investigating the two-state lasing conditions at room temperature in InAs/InP quantum dot lasers under a continuous wave electrical bias current.
研究成果
The study demonstrates that two-state lasing at room temperature in InAs/InP QD lasers is achievable by optimizing spacer thickness and dot-size dispersion, which enhances the bottleneck effect and inhomogeneous broadening. This optimization is crucial for reducing phase and intensity noise, thereby improving laser performance.
研究不足
The study is theoretical and relies on modeling assumptions. Experimental validation is necessary to confirm the findings. The impact of additional nonlinearities like gain compression is not included in the simulation.
