研究目的
Investigating the performance of a silicon-based quantum dot random laser controlled by the resistivity of silicon wafers and the length of silicon nanowires.
研究成果
The study demonstrated a silicon-based random laser device with performance controllable by the resistivity of the silicon wafers and the length of the silicon nanowires. The transition from incoherent to coherent random lasing was achieved, and the lasing threshold was found to increase with the length of the nanowires. These findings are significant for the development of high-performance silicon-based random lasers.
研究不足
The study is limited by the specific parameters of the silicon nanowires and quantum dots used, and the performance may vary with different materials or fabrication methods.
1：Experimental Design and Method Selection:
The study employed a metal-assisted chemical etching (MACE) method to grow silicon nanowire arrays and spin-coated a colloidal quantum dot solution on these arrays to form random lasers.
2：Sample Selection and Data Sources:
Boron-doped p-type Si (100) wafers with different resistivities were used. The samples were characterized by SEM, and the laser performance was tested under optical pumping.
3：List of Experimental Equipment and Materials:
SEM (Hitachi S-4800), tungsten halogen lamp (HL-2000), femtosecond laser, spectrometer (Maya 2000 Pro, Ocean Optics).
4：Experimental Procedures and Operational Workflow:
The Si wafers were cleaned, etched using the MACE process, and then coated with quantum dots. The laser devices were optically pumped, and the emission was collected and analyzed.
5：Data Analysis Methods:
The emission spectra were analyzed to determine the lasing threshold and the transition from incoherent to coherent lasing.
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