研究目的
Investigating the optical and structural properties of n-type strain-symmetrized Ge/SiGe asymmetric coupled quantum wells for the realization of a Ge/SiGe Quantum Cascade Laser.
研究成果
The study demonstrates high material quality and control over inter-well coupling in Ge/SiGe quantum wells, making them promising for THz QCL applications. Theoretical modeling suggests that Ge/SiGe QCLs could offer advantages over III-V based devices in terms of temperature robustness and gain.
研究不足
The study is focused on the material properties and theoretical modeling of Ge/SiGe quantum wells for THz QCLs. Experimental demonstration of lasing action is not yet achieved, and further optimization of the QCL design and fabrication is needed.
1：Experimental Design and Method Selection:
The study involves the growth of n-type strain-symmetrized Ge/SiGe asymmetric coupled quantum wells on Si(001) substrates using ultrahigh vacuum chemical vapor deposition. The optical and structural properties are analyzed to assess the material quality and control over inter-well coupling and electron tunneling.
2：Sample Selection and Data Sources:
Samples are characterized by scanning transmission electron microscopy (STEM), atomic probe tomography (APT), and X-ray diffraction. Fourier Transform Infrared (FTIR) absorption spectroscopy is used to identify intersubband absorptions.
3：List of Experimental Equipment and Materials:
Ultrahigh vacuum chemical vapor deposition system, STEM, APT, X-ray diffraction equipment, FTIR spectrometer.
4：Experimental Procedures and Operational Workflow:
Growth of Ge/SiGe quantum wells, structural and optical characterization, FTIR measurements, and theoretical modeling using non-equilibrium Green’s function formalism.
5：Data Analysis Methods:
Analysis of STEM, APT, and X-ray diffraction data for structural quality assessment. FTIR spectra analysis for intersubband transitions. Theoretical modeling of non-radiative lifetimes and gain.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
