研究目的
Investigating the microwave linear characteristics of on-wafer GaAs pseudomorphic HEMTs (pHEMTs) with different gate widths to compare the effectiveness of tuner-based and tuner-less noise characterization techniques.
研究成果
The paper validates the tuner-less technique for characterizing the noise figure of on-wafer GaAs HEMT devices up to 26 GHz, demonstrating its equivalence to the standard tuner-based technique. The tuner-less method offers the advantage of eliminating the need for a source tuner, simplifying the measurement setup.
研究不足
The study acknowledges slight differences in measurement results due to variations in bias points and the approximation introduced by using ideal transmission lines of fixed length for all devices, despite their differing input and output layout topologies.
1：Experimental Design and Method Selection:
The study employed two approaches for noise characterization: a standard tuner-based technique and a novel tuner-less technique. The effectiveness of these methods was compared through measurements conducted in two different laboratories.
2：Sample Selection and Data Sources:
Four on-wafer GaAs pHEMTs with gate lengths of 0.15 μm and scaled gate widths were used as devices under test (DUTs).
3：15 μm and scaled gate widths were used as devices under test (DUTs).
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included precision network analyzers, noise figure analyzers, noise sources, and computer-controlled coaxial tuners from Agilent and Keysight, among others.
4：Experimental Procedures and Operational Workflow:
Scattering and noise parameters were measured using both tuner-based and tuner-less techniques. The reference planes for measurements were adjusted to account for differences in calibration methods between laboratories.
5：Data Analysis Methods:
Data analysis involved comparing noise figure measurements obtained from both techniques and simulating the effect of different reference planes using ideal transmission lines in a circuit simulator.
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