研究目的
To develop a facile and simple method for nitrogen-doped graphene (NDG) in a cost-effective manner for use in supercapacitors.
研究成果
The simple direct laser writing technique was successfully used to accomplish the simultaneous photoreduction and nitrogen-doping of GO. The N content of NRGO reached a maximum value of 6.37%. All NRGO-based supercapacitors exhibited higher specific capacitance than those based on pure RGO. The electrochemical performance of NRGO-based supercapacitors varied with different contents of N species, indicating that the properties of obtained NRGO can be controlled by adjusting the doping ratios.
研究不足
The stringent requirements of operating conditions, use of toxic raw materials in the fabrication process, harm to the environment, and less safety are some of the shortcomings of existing N-doping methods.
1：Experimental Design and Method Selection:
A direct laser writing technique was used for simultaneous photoreduction and N-doping of graphene oxide (GO) using urea as a N source.
2：Sample Selection and Data Sources:
GO was synthesized using Hummer’s method, and urea was added to the solution in different mass ratios.
3：List of Experimental Equipment and Materials:
Carbon dioxide laser (GY-G40K laser engraving machine), GO, urea, PVA-H3PO4 electrolyte.
4：Experimental Procedures and Operational Workflow:
GO/NGO solution was drop-coated onto a clean glass substrate and subjected to direct laser writing. The obtained samples were named as RGO or NRGO1 to NRGO
5：Data Analysis Methods:
X-ray photoelectron spectroscopy (XPS) spectra were recorded to measure the bonding configuration and contents of N atoms. Cyclic voltammetry (CV) was performed to obtain CV plots.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
