研究目的
Investigating the regional control of the band-gap energies using the highly-stacked quantum dot (QD) on InP (311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique.
研究成果
The regional control of the intermixing of the 1550nm-band highly-stacked quantum dot (QD) by B+ implantation and rapid thermal annealing (RTA) was demonstrated. Employing the combination of SiO2 and polymer (AZ) films, the regional control of the blue shift of the PL peak wavelengths from 1550 nm, 1460 nm and 1410 nm was successfully realized. This regional band-gap tailoring technique should be suitable for highly functional photonic integrated circuits using 1550nm-band QDs.
研究不足
The difference in threshold current densities for the QD and QDI samples may be attributed to the difference of density of states, resultantly leading to the difference of the peak gains as well as the annealing effect possibly relaxing the strains.
