研究目的
Investigating the fabrication and testing of a reduced graphene oxide-based field effect transistor for the detection of UV photons in the 100-280 nm range.
研究成果
The fabricated rGO-based FET shows promising response to UV photons in the 100-280 nm range, with resistance changes more pronounced near the Dirac point. The device has potential as a UV photon detector, though further optimization is needed.
研究不足
The study is preliminary, focusing on proof of concept. The response of the device decreases with reduced photon flux, indicating a dependency on photon flux intensity.
1：Experimental Design and Method Selection:
The study employs a novel hybrid technique for the reduction of graphene oxide, combining chemical route using hydroiodic fumes and thermal annealing. The fabricated device is tested for UV photon detection.
2：Sample Selection and Data Sources:
Graphene oxide synthesized using modified Hummer’s method is used. The samples are characterized using XRD and Raman spectroscopy.
3：List of Experimental Equipment and Materials:
Silicon wafer, hydroiodic acid, thermal evaporation technique for depositing aluminum contacts, optical profiler for thickness measurement.
4：Experimental Procedures and Operational Workflow:
GO is spin-coated over a silicon substrate, exposed to HI vapors, cleaned, annealed, and then characterized. The FET is fabricated with an undoped silicon wafer, oxide layer, and rGO layer, with aluminum contacts deposited for drain, source, and gate.
5：Data Analysis Methods:
The Dirac point is estimated without UV illumination. The device's response to UV photons is measured in terms of resistance change.
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