研究目的
Investigating the thermal characteristics of micro-light-emitting diodes (mLEDs) on GaN and sapphire substrates under high current injection levels to understand the thermal transport mechanisms.
研究成果
The study concluded that mLEDs on GaN substrates exhibit lower junction temperatures and more uniform temperature distributions compared to those on sapphire substrates under high current injection levels. The high thermal and electrical conductivity of the GaN substrate plays a key role in these improved thermal characteristics.
研究不足
The switch time of 1 ms for the heating and test currents shielded some signals at the very beginning, which are important for resolving the structure functions. Modeling thermal interfaces with normal software is challenging.
1：Experimental Design and Method Selection
The study employed forward-voltage methods, thermal transient measurements, and infrared imaging to analyze the thermal characteristics of mLEDs. The APSYS software was used for simulation.
2：Sample Selection and Data Sources
mLEDs were fabricated on GaN and sapphire substrates with diameters ranging from 10–160 μm. The samples were named after their substrates and pillar sizes.
3：List of Experimental Equipment and Materials
Keithley 2601A system SourceMeter, TTE-400 Light Emitting Diodes Thermal Test Equipment, FLIR System SC5700 camera, APSYS package of Crosslight software.
4：Experimental Procedures and Operational Workflow
The temperature coefficient (K factors) were measured using voltages at a constant sensor current. Thermal transient measurements were performed with heating and test currents. Infrared images were captured to assess lateral temperature distribution.
5：Data Analysis Methods
The structure functions of the mLEDs were obtained from the cooling curves. The temperature distributions were simulated using APSYS software.
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