研究目的
To develop a self-consistent time-domain material travelling-wave (TDTW) model for the simulation of self-assembled QD-SESAM and analyze its characteristics including modulation depth and recovery dynamics under various parameters.
研究成果
The TDTW model effectively analyzes QD-SESAM characteristics, showing that modulation depth is influenced by QD surface density, number of layers, and inhomogeneous broadening, while recovery dynamics are primarily affected by the applied reverse voltage.
研究不足
The model assumes constant carrier lifetime and Auger recombination times for all QD states, which may not fully capture the dynamics under varying QD surface densities.
1：Experimental Design and Method Selection:
The study employs a 1-D TDTW model considering time-varying QD optical susceptibility, refractive index variation, and carrier concentration rate equations.
2：Sample Selection and Data Sources:
The model analyzes a
3：3-μm p-i-n QD InAs-GaAs SESAM. List of Experimental Equipment and Materials:
The study involves simulations without specific experimental equipment.
4：Experimental Procedures and Operational Workflow:
The model solves travelling wave equations and carrier dynamics rate equations to analyze SESAM characteristics.
5：Data Analysis Methods:
The analysis includes studying modulation depth and recovery dynamics under various conditions.
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