研究目的
Investigating the performance of a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions for mid-infrared (mid-IR) wavelengths.
研究成果
The BP/h-BN/graphene heterojunction-based tunneling junction photodetector demonstrates a high photodetection performance at mid-IR wavelengths, with a significant improvement in sensitivity over BP photo-transistors. This is attributed to tunneling-assisted noise management, offering a new strategy for controlling flicker noise and a promising platform for long-wavelength photodetection.
研究不足
The study is limited by the specific materials and fabrication techniques used, which may not be universally applicable. Additionally, the performance of the device at wavelengths beyond 4 μm was not explored.
1：Experimental Design and Method Selection:
The study involves the fabrication of BP/h-BN/graphene tunneling junctions using a dry-transfer technique to explore their photodetection performance at mid-IR wavelengths.
2：Sample Selection and Data Sources:
Materials were obtained using a standard mechanical exfoliation process, and heterostructures were assembled using a deterministic transfer technique.
3：List of Experimental Equipment and Materials:
Equipment includes an optical microscope, polyvinyl alcohol (PVA) for material transfer, a semiconductor characterization system, Atomic force microscopy (AFM), and a LABRAM-HR Raman spectrometer.
4：Experimental Procedures and Operational Workflow:
The process involved defining a source/drain pattern, depositing Ti/Au, and transferring BP, h-BN, and graphene layers to form the heterojunction. Electrical and optoelectrical measurements were then conducted.
5：Data Analysis Methods:
The study analyzed the temperature-dependent scanning photo-current, charge transport, and low-frequency noise spectrum to evaluate the device's performance.
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