摘要： The hysteresis effect and switchable photovoltaic phenomena in organo-metal halide perovskite have been observed in perovskite solar cells with certain structures and under certain measure conditions. These phenomena were favorably applied to resistive random-access memory and human-brain-mimicking devices, especially using photons as a reading or stress probe apart from using electrical probe. However, the mechanisms causing these effects are not fully understood. In this paper, the perovskite devices with different hole transporting layers, which have the work functions ranging from 5.9 eV to 3.7 eV, were fabricated and systematically characterized by current-voltage measurements and time-resolved photo-response measurements. These measurements show that the switchable photovoltaic phenomena are highly related to the work function of the hole transporting layer. The interfacial electronic structures of perovskite and several materials were studied in details using X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), suggesting that the switchable photovoltaic is extensively dependent on the strong band bending effect. Light-mediated XPS measurements reveals that the degree of band bending in the perovskite layer was manipulated by charge trapping/de-trapping and hole-carrier accumulation. Based on the electrical measurements and band diagram, we propose a model that combines ion migration and charge trapping/detrapping processes to explain the switchable photovoltaic phenomena.