研究目的
Investigating the atomic and electronic structure of the Si/EuO interface to understand and control the band offset for spintronics applications.
研究成果
The band offset at the Si/EuO interface can be tuned by controlling the interface oxidation level, offering a pathway to optimize this materials system for spintronics applications. The study validates a theoretical model of the interface through comparison with experimental XPS data.
研究不足
The study is limited by the computational approximations in DFT, such as the underestimation of band gaps. Experimental challenges include controlling the precise oxidation level at the interface.
1：Experimental Design and Method Selection:
The study combines first-principles calculations with experimental XPS measurements to investigate the Si/EuO interface. Theoretical models of the interface with varying oxidation levels are constructed and their thermodynamic stability is assessed.
2：Sample Selection and Data Sources:
Lightly doped n-type Si(100) wafers are used as substrates. EuO is deposited on Si using molecular-beam epitaxy (MBE) under controlled conditions.
3：List of Experimental Equipment and Materials:
MBE deposition chamber, VG Scienta R3000 analyzer, monochromated Al Kα x-ray source for XPS measurements.
4：Experimental Procedures and Operational Workflow:
Si substrates are prepared by removing native SiO2 using a variant of the Sr-assisted deoxidation process. EuO is deposited via two pathways differing in the sequence of Eu and O exposure. XPS measurements are conducted post-deposition.
5：Data Analysis Methods:
Band alignment is calculated using the average potential method and projected density of states analysis. Core-level shifts are simulated using final-state theory.
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