研究目的
Investigating the UV-NLA energy density necessary to reach the Si-NPs melting point without melting the substrate and determining the most favorable SiO2 buffer layer thickness.
研究成果
Numerical simulations provide guidelines for the design of structures to be annealed and on the expected process windows, which depend on the phase of the Si-NPs, the oxide thickness, and the Si-NPs surface coverage. Amorphous Si-NPs lead to a wider process window compared to their crystalline counterparts. A buffer SiO2 layer thinner than 30 nm is preferable to reach Si-NPs melting point before that of the Si substrate or the top oxide layer.
研究不足
The study is limited to numerical simulations and does not include experimental validation. The process windows depend on the phase of the Si-NPs, the oxide thickness, and the Si-NPs surface coverage, which may vary in practical applications.
