研究目的
Investigating the characteristics of lasers that generate high-power short light pulses in the IR spectral region require highly efficient photodetectors that operate at room temperature.
研究成果
A universal photodetector based on the photon-drag effect in semiconductors was designed, capable of detecting laser-radiation pulses in the IR range across a wide spectrum of times and powers, effectively replacing a set of specialized photodetectors.
研究不足
The upper limit of the dynamic range is limited by material destruction under high radiation and the effect of possible blooming of germanium at high intensities. The sensitivity could be improved with an antireflection coating.
1：Experimental Design and Method Selection:
The study proposes a photodetector model based on the photon-drag effect in semiconductors, specifically using germanium for high-power CO2 lasers in the IR range. The design allows for quick changes in the working length of the crystal element to adjust sensitivity and range of measured pulse durations.
2：Sample Selection and Data Sources:
The photodetector uses a germanium crystal rod with a square cross section of 10 × 10 mm2 and seven ohmic contacts applied at equal distances for flexibility in measurement ranges.
3：List of Experimental Equipment and Materials:
The primary material is a p-type germanium single crystal. The device includes a switch for selecting different contact pairs to adjust the working length of the crystal.
4：Experimental Procedures and Operational Workflow:
The photodetector's performance was tested across six operating ranges, measuring its volt-watt characteristics and the dependence of the output signal on crystal resistance.
5：Data Analysis Methods:
The study analyzed the linearity of the PD's volt-watt characteristics and the linear dependence of the output signal on crystal resistance at fixed power values.
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