研究目的
To propose a novel design of a metal-clad III–V semiconductor cavity coupled to a silicon-on-insulator (SOI) waveguide with an integrated feedback stub for external tuning of the Q factor and to demonstrate its effectiveness through numerical analysis and thermal modeling.
研究成果
The proposed metal-clad III–V semiconductor cavity with an integrated feedback stub demonstrates significant Q-factor improvement and enhanced thermal performance, making it a promising candidate for on-chip optical interconnects and photonic integrated circuits.
研究不足
The study is based on numerical simulations and lacks experimental validation. The practical fabrication challenges of integrating such a cavity with a SOI waveguide are not addressed.
1：Experimental Design and Method Selection:
The study employs coupled-mode theory and finite-difference time-domain (FDTD) simulations to analyze the optical properties and thermal performance of the proposed cavity structure.
2：Sample Selection and Data Sources:
A silver-clad InP/InGaAs cavity with specific dimensions is considered for simulation.
3：List of Experimental Equipment and Materials:
The simulation uses a commercial simulator, Sentaurus TCAD, for thermodynamic simulations.
4：Experimental Procedures and Operational Workflow:
The study involves numerical simulations to investigate the Q-factor tuning mechanism and thermal properties of the cavity.
5：Data Analysis Methods:
The results are analyzed to confirm the Q-factor improvement and thermal performance enhancement.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
