研究目的
The aim of this research is to produce novel photodetector by the use of CdS-quantum dots decorated cadmium oxide thin film interlayer and compare morphological, photoelectrical and electrical characteristics of this device. The other aim of this research work is to fabricate photodetector which has the high performance with fast response duration and high gain by efficient collection of photogenerated carriers, and transporting these charge carriers to the electrode.
研究成果
The fabricated Al/CdS-CdO/p-Si/Al device could be utilized as a photodetector that has good performance in developing photodetector technology. Moreover, it can also be used as a photodiode due to its electrical characteristics.
研究不足
The performances of the produced photodetector are far from the expectations due to crystallographic imperfections, surface imperfections and low crystallizations.
1：Experimental Design and Method Selection:
The CdO thin film was synthesized using pure cadmium acetate dissolved in 2-Metoxyethanol with ethanolamine as a stabiliser, followed by sol-gel spin coating method. CdS nanoparticles were grown on the films using SILAR technique.
2：Sample Selection and Data Sources:
p-type silicon substrate with 5–10 Ω cm resistivity, (111) surface orientation and thickness 600 μm, and glass substrate were used.
3：List of Experimental Equipment and Materials:
Cadmium acetate, 2-Metoxyethanol, ethanolamine, Na2S, [CH3NO3)2 4H2O], Al contact by the thermal evaporating system, KEITHLEY 4200, 200 W halogen lamp, solar power meter (TM 206).
4：6).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The films were coated on the substrates, dried, and annealed. CdS nanoparticles were grown using SILAR technique. The diode was fabricated with Al contact.
5：Data Analysis Methods:
The optical study was implemented by UV-Vis spectroscopy, morphological and elemental composition by FE-SEM and EDX, and electrical properties by I/C-V measurements.
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