研究目的
The purpose of this work is to develop an ICP etching process for InP-based heterostructures in a Cl2-based gas mixture. The process being developed should provide the formation of optical waveguide structures with a high aspect ratio and a smooth surface morphology.
研究成果
The developed ICP etching process for InP-based heterostructures in the Cl2/Ar/N2 plasma achieves high anisotropy and smooth surface morphology without the need for substrate preheating. It is suitable for forming waveguide structures with high aspect ratios in InP-based optical devices.
研究不足
The process requires careful control of gas mixture composition and etching parameters to achieve desired etching rate and surface morphology. The need for preheating the substrate is eliminated, expanding the equipment options.
