摘要： This work puts forward numerical and experimental investigations on laser dicing of glass-anisotropic single-crystal silicon double-layer wafer using laser induced thermal-crack propagation (LITP). A semiconductor continuous wave laser working at the defocusing mode serves as volumetric heat source for glass layer while as surface heat source for silicon layer. Based on the classical fracture theory, a static seam-type crack is introduced under the circumstance of ABAQUS to simulate the crack fracture modes in glass layer as well as silicon layer with crystal planes of (100), (110) and (111) during laser dicing in different dicing directions. In the experiments, processing parameters are kept the same as the simulations and typical dicing directions obtained from simulations are also used. The surface morphologies of crack edges are measured by the optical microscope and surface profiler. Through the comparison of numerical and experimental results it is discovered that for the specific substrate, the evolution of crack edge qualities in different dicing directions and different layers can be interpreted based on the corresponding stress distribution and stress intensity factor (SIF) ratio explicitly. And most important of all, the anisotropy of silicon layer has significant influence on the fracture mode and edge quality of crack in both layers.