研究目的
Investigating the growth habits of Bismuth Selenide (Bi2Se3) layers and nanowires over Stranski–Krastanov Indium Arsenide Quantum Dots to understand the influence of quantum dot density and size on the growth patterns of Bi2Se3.
研究成果
The growth of Bi2Se3 over GaAs surfaces covered with In(Al)As QDs of different densities results in a variety of growth patterns that originate from exposure of the growing front to different crystallographic planes exposed by the QDs. High-resolution TEM imaging revealed the preference of the Bi2Se3 layer growth to align with the (111) QDs facets. Ultrahigh-density QD surfaces result in a pattern of crossing nanowires, suggesting promising approaches for the controlled growth of Bi2Se3 nanostructures.
研究不足
The study focuses on the growth habits of Bi2Se3 over InAs quantum dots and does not extensively explore the electronic or optical properties of the resulting nanostructures. The influence of other substrate types or growth conditions on Bi2Se3 growth habits is not investigated.
1：Experimental Design and Method Selection:
The study involved the growth of Bi2Se3 layers and nanowires by molecular beam epitaxy (MBE) on self-assembled Stranski–Krastanov InAs quantum dots of different sizes and densities on GaAs substrates. The size and density of the InAs quantum dots were modified by changes in the growth rate and composition.
2：Sample Selection and Data Sources:
Three variations of self-assembled InAs SK QDs were grown with different densities and sizes by altering the growth rate, growth time, and composition.
3：List of Experimental Equipment and Materials:
The samples were grown in a dual-chamber Riber 2300P system equipped with in situ reflection-high-energy electron diffraction (RHEED). High-resolution x-ray diffraction, scanning probe microscopy, energy-dispersive x-ray spectroscopy, and high-resolution electron microscopy were used for characterization.
4：Experimental Procedures and Operational Workflow:
The InAs QDs were grown on GaAs substrates, followed by the growth of Bi2Se3 layers. The growth habits of Bi2Se3 were studied under different conditions.
5：Data Analysis Methods:
The structure and growth habits of the Bi2Se3 layers were analyzed using various microscopy and spectroscopy techniques.
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