研究目的
Investigating the intersubband optical transitions in ZnO/MgxZn1?xO asymmetric coupled quantum wells for potential applications in infrared and THz optoelectronic devices.
研究成果
The observation of intersubband optical transitions in ZnO/MgxZn1?xO asymmetric coupled quantum wells demonstrates the strong coupling between the quantum wells, showing potential for applications in infrared and THz optoelectronic devices. The theoretical simulation provides reasonable agreement with the experimental results, indicating the feasibility of ZnO-based quantum cascade lasers.
研究不足
The study is limited by the uncertainties of the material parameters, the fluctuation of the layer thickness, and the V groove shape of the heterostructures. The impact of the V groove shape on the absorption is under investigation.
1：Experimental Design and Method Selection:
The study involves the growth of ZnO/MgxZn1?xO multi-ACQW samples by molecular beam epitaxy (MBE) on m plane substrates, followed by characterization using high-angle annular dark-field imaging, scanning transmission electron microscopy (STEM HAADF), and x-ray reflectivity.
2：Sample Selection and Data Sources:
Three samples with different MgxZn1?xO barrier thicknesses were grown and characterized.
3：List of Experimental Equipment and Materials:
MBE for growth, STEM HAADF and x-ray reflectivity for structural characterization, and a Bruker Fourier transform infrared spectrometer (FTIR) for absorption measurements.
4：Experimental Procedures and Operational Workflow:
The samples were mechanically polished for optical quality, and transmission measurements were performed at room temperature using a Brewster’s angle geometry.
5：Data Analysis Methods:
A Schr?dinger–Poisson solver was used to model the ISBTs, and a complete quantum model including interaction between different intersubband transitions was applied to explain the observed absorption spectra.
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