研究目的
To demonstrate the development of a high performance quantum cascade laser at (cid:2) ～ 5(cid:3)1 (cid:4)m with low strain-balanced structure using a double-phonon resonant design approach.
研究成果
A MWIR QCL device with low strain compensation double-phonon resonant active region structure was demonstrated. The device shows a CW optical power up to 1.5 W at 288 K with a high WPE of 8.5%. The high performance of the present QCL indicates that high material quality of low strain active region can compensate for the weak carrier con?nement in the case of low strain MWIR QCLs.
研究不足
The accumulation of thermal lattice mismatch in a high strain structure might lead to catastrophic failure of a QCL. The interface roughness is relatively high in a highly strained superlattice material which decreases the gain of the QCL due to interface scattering.
1：Experimental Design and Method Selection:
The active region of the QCL is designed based on double-phonon resonance structure with a relatively low strain component of In0(cid:4)61Ga0(cid:4)39As/In0(cid:4)33Al0(cid:4)57As. The QCL structure was grown on an n-doped InP substrate by MBE.
2：Sample Selection and Data Sources:
The active core structure contains 40 periods of strain-compensated In0(cid:4)61Ga0(cid:4)39As/In0(cid:4)43Al0(cid:4)57As quantum wells and barriers.
3：List of Experimental Equipment and Materials:
Solid source molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE), photolithography, wet chemical etching method, plasma enhanced chemical vapor deposition, e-beam evaporation.
4：Experimental Procedures and Operational Workflow:
The QCL wafer was processed into double channel waveguide with an active core width of 10 (cid:2)m, then InP:Fe was grown by MOVPE in the channel as buried heterostructure.
5：Data Analysis Methods:
The optical con?nement factor and effective refractive index were calculated to evaluate the waveguide loss and mirror loss.
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