研究目的
Investigating the improvement of carrier transport in ZnO/MgZnO multiple-quantum-well ultraviolet light-emitting diodes by energy band modification on MgZnO barriers.
研究成果
The optimized LED with a Mg composition graded from 24% to 2% in each triangular barrier exhibits the highest IQE of 88.0% at 200 A/cm2, showing a 31.3% increase compared with the conventional LED with square barriers. This enhancement is attributed to the modified energy band structures that improve the symmetry in carrier transport and increase the radiative recombination rate in each ZnO quantum well.
研究不足
The study is based on numerical simulation, and the practical implementation of the proposed design may face challenges related to material growth and device fabrication.
1：Experimental Design and Method Selection:
The study involved numerical analysis of ZnO/MgZnO multiple-quantum-well UV LEDs with graded-composition barriers using the commercial computing simulation program SiLENSeTM.
2：Sample Selection and Data Sources:
The device structure included a sapphire substrate, an n-Mg
3：20Zn80O cladding layer, five pairs of Mg24Zn76O/ZnO MQWs, a p-Mg20Zn80O cladding layer, and a p-ZnO contact layer. List of Experimental Equipment and Materials:
The simulation was performed using SiLENSeTM software.
4：Experimental Procedures and Operational Workflow:
The energy band structures, carrier injection and radiative recombination properties, and IQEs of the UV LEDs were numerically analyzed.
5：Data Analysis Methods:
The simulation results were analyzed to understand the impact of graded-composition barriers on the performance of the LEDs.
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