摘要： In this study, we have estimated the interfacial barrier height ((cid:1)b) of Indium Tin Oxide (ITO) coated glass/Malachite Green (MG) dye/Aluminium (Al) based organic device and subsequently we have also observed the effect of carboxylfunctionalized SWCNT (COOH-SWCNT) on the (cid:1)b. Presence of COOH-SWCNT reduces the interfacial barrier height as SWCNT acts as filler and provides easy path for charge percolation. We have used ITO coated glass and aluminium as front electrode and back electrode respectively to form the organic device. This organic device has been prepared with and without COOH-SWCNT by using spin coating technique. We have measured the steady state current-Voltage (I-V) characteristics of the device to estimate the interfacial barrier height ((cid:1)b) of the device. (cid:1)b is reduced from 0.67 eV to 0.59 eV in the presence of COOH-SWCNT. We have also estimated the (cid:1)b by using Norde’s Method. This method also shows a reduction of interfacial barrier height from 0.72 eV to 0.64 eV due to incorporation of COOH-SWCNT. Both the methods show good consistency with each other. Reduction of the interfacial barrier height in presence of COOH-SWCNT indicates the enhancement of charge injection through the metal-organic dye interface. By suitable doping or addition of COOH-SWCNT within the MG dye it is possible to reduce the barrier height and enhance the current injection through metal-organic dye interface.