研究目的
Demonstrating a micro-transfer-printed III-V-on-silicon distributed Bragg reflector (DBR) laser using pre-processed III-V semiconductor optical amplifiers (SOAs).
研究成果
The demonstration of a III-V-on-silicon DBR laser using micro-transfer-printing showcases the technique's potential for realizing III-V-on-silicon photonic integrated circuits, combining the advantages of integrating pre-fabricated, pre-tested devices with high throughput integration.
研究不足
The technique requires the capability to process III-V devices on large wafers and may face compound yield issues as lasers can only be tested after integration. The silicon photonics back-end process flow needs adaptation to accommodate III-V devices.
1：Experimental Design and Method Selection:
The study involves the micro-transfer-printing technique for integrating III-V devices on a silicon photonic wafer. The process includes the fabrication of III-V semiconductor optical amplifiers (SOAs) on a III-V source wafer, encapsulation and release of devices, and their transfer to a silicon photonic target wafer.
2：Sample Selection and Data Sources:
The samples are pre-fabricated III-V SOAs on a source wafer with a release layer.
3：List of Experimental Equipment and Materials:
Includes a PDMS stamp for transfer, FeCl3:H2O etch for selective etching of the InAlAs release layer, and DVS-BCB bonding layer for printing on silicon-on-insulator wafers.
4：Experimental Procedures and Operational Workflow:
The process involves device fabrication, encapsulation, release etch, micro-transfer-printing, removal of encapsulation, and electrical contacting.
5：Data Analysis Methods:
Characterization of the DBR lasers includes measuring the L-I-V curve and recording the laser spectrum.
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