研究目的
To solve the issue of electrical degradation behavior in metal oxide thin film transistor (TFT) under negative bias-illumination stress (NBIS) by doping Sr and N in In2O3 thin film to improve its NBIS stability.
研究成果
The SrInON TFT exhibits enhanced NBIS stability with a △VTH of -1.02 V after 60 min under NBIS, a mobility of 16.44 cm2/Vs, a VTH of 2.83 V, and a SS of 0.24 V/dec. The doping of Sr and N decreases the content of oxygen vacancies (Vo), improving stability and electrical performance.
研究不足
The study focuses on the improvement of NBIS stability and electrical performance through Sr and N doping but may not address all potential degradation mechanisms or the scalability of the fabrication process.
1：Experimental Design and Method Selection:
The study involves doping Sr and N in In2O3 thin film to improve NBIS stability. The fabrication of SrInON thin film is done by aqueous route at a low annealing temperature (300 °C).
2：Sample Selection and Data Sources:
The samples include In2O3, SrInO, and SrInON TFTs.
3：List of Experimental Equipment and Materials:
Indium nitrate hydrate, strontium nitrate hydrate, ammonium nitrate, DI water, Atomic layer deposition (ALD) for Al2O3 dielectric, UV/ozone treatment, spin-coating, thermal evaporation for Al electrode deposition.
4：Experimental Procedures and Operational Workflow:
Preparation of precursor solution, spin-coating on treated substrate, drying, annealing, and electrode deposition.
5：Data Analysis Methods:
Electrical performance parameters such as mobility (μ), threshold voltage (VTH), and subthreshold swing (SS) are calculated and analyzed.
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