研究目的
Investigating the improvement of ferroelectric switching in sputtered HfZrOx (HZO) devices through high pressure annealing (HPA) at lower temperatures.
研究成果
The study achieved sharply transited ferroelectric switching with a 2 Pr greater than 20 μC/cm2 in sputtered HZO devices by performing FGA HPA at 550 oC and 30 atm. The HPA facilitated the crystallization of HZO at lower temperatures, improving switching behavior and breakdown conditions. However, higher pressures reduced the number of active phases, leading to larger calculated Ec and lower Pr.
研究不足
The study notes the difficulty in detecting the gas involved in the HZO with physical tools and suggests that further research is needed to optimize pressure and temperature conditions for various gases or gas mixtures.
1：Experimental Design and Method Selection:
The study involved depositing a 17-nm-thick HZO layer on a TiN bottom electrode by sputtering, followed by forming a Pt top electrode. High pressure annealing (HPA) was introduced as a post metallization annealing technique.
2：Sample Selection and Data Sources:
The samples were characterized using a Keithley 4200 with pulse measurement unit modules.
3：List of Experimental Equipment and Materials:
A sputtering system for HZO deposition, TiN and Pt electrodes, and forming gas (FGA) for HPA.
4：Experimental Procedures and Operational Workflow:
The HPA was performed at 550 oC with forming gas, and the devices were characterized for ferroelectric properties.
5：Data Analysis Methods:
The study used short pulse switching techniques and physical analysis to understand the impact of HPA on ferroelectric switching parameters.
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