研究目的
Investigating the reliability of Ti / n-InP and Ti / p-InGaAs contacts for their integration on III-V / Si hybrid lasers on a 300 mm platform.
研究成果
The study demonstrates that Ti / n-InP and Ti / p-InGaAs contacts are stable under the conditions tested, with the Ti / n-InP system stable from 200 to 450 °C and the Ti / p-InGaAs system stable from 300 to 450 °C. The integration and back-end sequences, and simulation of several laser uses do not deteriorate their contact resistivities.
研究不足
The study is limited to the electrical properties of Ti contacts on n-InP and p-InGaAs, focusing on their reliability under specific conditions. Potential areas for optimization include further reducing contact resistivity below the upper limit of 5 x 10?5 Ω.cm2.
1：Experimental Design and Method Selection:
The study involves the use of Transfer Length Method (TLM) measurements to assess the electrical properties of Ti contacts on n-InP and p-InGaAs.
2：Sample Selection and Data Sources:
The study was performed on 300 nm doped epilayers (n-doped InP and p-doped InGaAs) on semi-insulating InP substrates.
3：List of Experimental Equipment and Materials:
Equipment includes a 300 mm Endura? platform for Ti deposition, and materials include Ti, TiN, Ti/Pt/Au for contact filling.
4：Experimental Procedures and Operational Workflow:
The process involves cleaning samples, Ti deposition, capping with TiN, filling contacts with Ti/Pt/Au, and performing TLM measurements.
5：Data Analysis Methods:
Contact resistivity values are averaged from measurements on 9 unit dies, with error bars representing variability.
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