研究目的
To review the recent progress of near-infrared photodetectors based on Schottky junctions involving graphene, highlighting their potential to overcome the limitations of metal-based Schottky photodetectors and compare favorably with germanium photodetectors in silicon photonics.
研究成果
The paper concludes that near-infrared silicon photodetectors based on internal photoemission in graphene/silicon Schottky junctions show performance comparable to germanium technology in silicon photonics for telecom and datacom applications. These devices also have potential for operation at longer wavelengths, opening new applications in optical communications, light-radars, and biomedical imaging.
研究不足
The integration of 2D materials like graphene in silicon technology for high-volume production remains a challenge that needs to be addressed in the future.
